InAs/InP self-assembled quantum dots: wavelength tuning and optical nonlinearities

R. Nötzel, J.E.M. Haverkort

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)
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Abstract

Quantum dots (QDs, i.e., semiconductor nanocrystals) can be formed by spontaneous self-assembly during epitaxial growth of lattice-mismatched semiconductor systems. InAs QDs embedded in GaInAsP on InP are introduced, which can be continuously wavelength-tuned over the 1.55 mm region by inserting ultrathin GaAs or GaP interlayers below them. We subsequently introduce a state-filling optical nonlinearity, which only requires two electron-hole pairs per QD. We employ this nonlinearity for all-optical switching using a Mach-Zehnder interferometric switch. We find a switching energy as low as 6 fJ. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)327-334
JournalAdvanced Functional Materials
Volume16
Issue number3
DOIs
Publication statusPublished - 2006

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