InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

Q. Gong; R. Nötzel; P.J. Veldhoven, van; T.J. Eijkemans; J.H. Wolter

doi:10.1063/1.1785859

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

Q. Gong, R. Nötzel, P.J. Veldhoven, van, T.J. Eijkemans, J.H. Wolter

Photonics and Semiconductor Nanophysics

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Abstract

We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 mu m region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 mu m is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations

Original language	English
Pages (from-to)	1404-1406
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1785859
Publication status	Published - 2004

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title = "InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers",

abstract = "We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 mu m region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 mu m is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations",

author = "Q. Gong and R. N{\"o}tzel and \{Veldhoven, van\}, P.J. and T.J. Eijkemans and J.H. Wolter",

year = "2004",

doi = "10.1063/1.1785859",

language = "English",

volume = "85",

pages = "1404--1406",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

AU - Gong, Q.

AU - Nötzel, R.

AU - Veldhoven, van, P.J.

AU - Eijkemans, T.J.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

N2 - We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 mu m region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 mu m is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations

AB - We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 mu m region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 mu m is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations

U2 - 10.1063/1.1785859

DO - 10.1063/1.1785859

M3 - Article

SN - 0003-6951

VL - 85

SP - 1404

EP - 1406

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

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