InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers

Q. Gong; R. Nötzel; P.J. Veldhoven, van; J.H. Wolter

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers

Q. Gong, R. Nötzel, P.J. Veldhoven, van, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-??m telecom wavelength range. The 2-??m-wide ring waveguides are made from InGaAsP–InP (100) material suitable for active–passive photonic integrated circuits. Lasing in rings down to 22 ??m in diameter is found, with a threshold current of 12.5 mA. Index Terms—Integrated optics, microring lasers, quantum dots (QDs), semiconductor lasers.

Original language	English
Title of host publication	13th Int. Conf. on Molecular Beam Epitaxy, Edinburgh (UK), Aug. 17-22, 2004
Place of Publication	Edinburgh (UK)
Publication status	Published - 2004
Event	conference; 13th Int. Conf. on Molecular Beam Epitaxy - Duration: 1 Jan 2004 → …

Conference

Conference	conference; 13th Int. Conf. on Molecular Beam Epitaxy
Period	1/01/04 → …
Other	13th Int. Conf. on Molecular Beam Epitaxy

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@inproceedings{1fa1500777e94c14a89d0704622ebd25,

title = "InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers",

abstract = "In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-??m telecom wavelength range. The 2-??m-wide ring waveguides are made from InGaAsP–InP (100) material suitable for active–passive photonic integrated circuits. Lasing in rings down to 22 ??m in diameter is found, with a threshold current of 12.5 mA. Index Terms—Integrated optics, microring lasers, quantum dots (QDs), semiconductor lasers.",

author = "Q. Gong and R. N{\"o}tzel and {Veldhoven, van}, P.J. and J.H. Wolter",

year = "2004",

language = "English",

booktitle = "13th Int. Conf. on Molecular Beam Epitaxy, Edinburgh (UK), Aug. 17-22, 2004",

note = "conference; 13th Int. Conf. on Molecular Beam Epitaxy ; Conference date: 01-01-2004",

}

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers. / Gong, Q.; Nötzel, R.; Veldhoven, van, P.J. et al.
13th Int. Conf. on Molecular Beam Epitaxy, Edinburgh (UK), Aug. 17-22, 2004. Edinburgh (UK), 2004.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers

AU - Gong, Q.

AU - Nötzel, R.

AU - Veldhoven, van, P.J.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

N2 - In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-??m telecom wavelength range. The 2-??m-wide ring waveguides are made from InGaAsP–InP (100) material suitable for active–passive photonic integrated circuits. Lasing in rings down to 22 ??m in diameter is found, with a threshold current of 12.5 mA. Index Terms—Integrated optics, microring lasers, quantum dots (QDs), semiconductor lasers.

AB - In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-??m telecom wavelength range. The 2-??m-wide ring waveguides are made from InGaAsP–InP (100) material suitable for active–passive photonic integrated circuits. Lasing in rings down to 22 ??m in diameter is found, with a threshold current of 12.5 mA. Index Terms—Integrated optics, microring lasers, quantum dots (QDs), semiconductor lasers.

M3 - Conference contribution

BT - 13th Int. Conf. on Molecular Beam Epitaxy, Edinburgh (UK), Aug. 17-22, 2004

CY - Edinburgh (UK)

T2 - conference; 13th Int. Conf. on Molecular Beam Epitaxy

Y2 - 1 January 2004

ER -

InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultra-thin GaAs and GaP interlayers

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