InAs/InP quantum dots, dashes and ordered arrays

N. Sritirawisarn, R. Nötzel

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

4 Citations (Scopus)

Abstract

This paper reviews the growth and characterization of epitaxial self-assembled InAs/InP(100) quantum dots (QDs), quantum dashes (QDashes), and ordered QD arrays fabricated by the chemical-beam epitaxy (CBE). The buffer layer surface morphology of latticematchedInGaAsP on InP(100) substrates is identified as the key parameter to determine either InAs QD or QDash formation. Growth conditions leading to the formation of QDashes are always accompanied by a rough buffer layer surface morphology, while well-shaped and symmetric QDs are reproducibly observed on smooth buffer layers. On such buffer layers the creation of laterally ordered linear InAs QD arrays based on self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates is achieved. InAs QD ordering is governed by local recognition of the lateral strain field modulation on the SL template which produces wirelike InAs structures along [001] due to anisotropic adatom surface migration and lateral/vertical strain correlation. Stacking in multilayers of linear InAs QD arrays with identical emission wavelength in the 1.55-mm region is realized upon insertion of ultrathin GaAs interlayers beneath the QDs with increasing thickness in successive layers, demonstrating a three-dimensionally self-ordered QD crystal with fully controlled structural and optical properties. # 2009 The Japan Society of Applied Physics
Original languageEnglish
Title of host publicationSolid State Devices and Materials : Special Issue of the International Conference on Solid State Devices and Materials (SSDM2008) 24–26 September 2008, Tsukuba International
EditorsM. Kuzuhara, K. Shibahara
Place of PublicationTokyo
PublisherJapan Society of Applied Physics
Pages04C121-1/7
DOIs
Publication statusPublished - 2008
Eventconference; Solid State Devices and Materials (SSDM) Japan, Iberaki, 2008 -
Duration: 1 Jan 2008 → …

Publication series

NameJournal of Applied Physics
Volume48
ISSN (Print)0021-8979

Conference

Conferenceconference; Solid State Devices and Materials (SSDM) Japan, Iberaki, 2008
Period1/01/08 → …
OtherSolid State Devices and Materials (SSDM) Japan, Iberaki, 2008

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