In-situ X-ray diffraction analysis of the crystallisation of a-SI: H films deposited by the expanding thermal plasma technique

F. Law; B. Hoex; J. Wang; J. Luther; K. Sharma; M. Creatore; M.C.M. van de Sanden

doi:10.1109/PVSC.2011.6186582

In-situ X-ray diffraction analysis of the crystallisation of a-SI: H films deposited by the expanding thermal plasma technique

F. Law, B. Hoex, J. Wang, J. Luther, K. Sharma, M. Creatore, M.C.M. van de Sanden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The solid phase crystallization (SPC) kinetics of expanding thermal plasma (ETP) grown a-Si:H films on glass substrates was studied by means of in-situ X-ray diffraction (XRD). The Johnson-Mehl-Avrami-Kolmogorov (JMAK) model was used for the analysis of the SPC kinetics revealing random nucleation and 3D growth of the crystallites. The activation energy of the SPC process was found to be 2.9 eV, which is lower compared to other deposition techniques. This indicates a more stable SPC process which is more tolerant to temperature variations. Post-SPC characterization using electron backscatter diffraction showed indications of good crystal quality with average grain sizes of ∼0.7-0.9 μm. Indications of homogeneous nucleation with no preferred nucleation sites were observed.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	3026-3030
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2011.6186582
Publication status	Published - 1 Dec 2011
Event	37th IEEE Photovoltaic Specialists Conference (PVSC 2011) - Seattle, United States Duration: 19 Jun 2011 → 24 Jun 2011 Conference number: 37

Conference

Conference	37th IEEE Photovoltaic Specialists Conference (PVSC 2011)
Abbreviated title	PVSC 2011
Country/Territory	United States
City	Seattle
Period	19/06/11 → 24/06/11

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10.1109/PVSC.2011.6186582

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title = "In-situ X-ray diffraction analysis of the crystallisation of a-SI: H films deposited by the expanding thermal plasma technique",

abstract = "The solid phase crystallization (SPC) kinetics of expanding thermal plasma (ETP) grown a-Si:H films on glass substrates was studied by means of in-situ X-ray diffraction (XRD). The Johnson-Mehl-Avrami-Kolmogorov (JMAK) model was used for the analysis of the SPC kinetics revealing random nucleation and 3D growth of the crystallites. The activation energy of the SPC process was found to be 2.9 eV, which is lower compared to other deposition techniques. This indicates a more stable SPC process which is more tolerant to temperature variations. Post-SPC characterization using electron backscatter diffraction showed indications of good crystal quality with average grain sizes of ∼0.7-0.9 μm. Indications of homogeneous nucleation with no preferred nucleation sites were observed.",

author = "F. Law and B. Hoex and J. Wang and J. Luther and K. Sharma and M. Creatore and {van de Sanden}, M.C.M.",

year = "2011",

month = dec,

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doi = "10.1109/PVSC.2011.6186582",

language = "English",

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pages = "3026--3030",

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note = "37th IEEE Photovoltaic Specialists Conference (PVSC 2011), PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

Law, F, Hoex, B, Wang, J, Luther, J, Sharma, K, Creatore, M & van de Sanden, MCM 2011, In-situ X-ray diffraction analysis of the crystallisation of a-SI: H films deposited by the expanding thermal plasma technique. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186582, pp. 3026-3030, 37th IEEE Photovoltaic Specialists Conference (PVSC 2011), Seattle, Washington, United States, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186582

In-situ X-ray diffraction analysis of the crystallisation of a-SI : H films deposited by the expanding thermal plasma technique. / Law, F.; Hoex, B.; Wang, J. et al.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 3026-3030 6186582.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Luther, J.

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AB - The solid phase crystallization (SPC) kinetics of expanding thermal plasma (ETP) grown a-Si:H films on glass substrates was studied by means of in-situ X-ray diffraction (XRD). The Johnson-Mehl-Avrami-Kolmogorov (JMAK) model was used for the analysis of the SPC kinetics revealing random nucleation and 3D growth of the crystallites. The activation energy of the SPC process was found to be 2.9 eV, which is lower compared to other deposition techniques. This indicates a more stable SPC process which is more tolerant to temperature variations. Post-SPC characterization using electron backscatter diffraction showed indications of good crystal quality with average grain sizes of ∼0.7-0.9 μm. Indications of homogeneous nucleation with no preferred nucleation sites were observed.

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In-situ X-ray diffraction analysis of the crystallisation of a-SI: H films deposited by the expanding thermal plasma technique

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