In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials

M. Kaiser; L. van Pieterson; M.A. Verheijen

doi:10.1063/1.1775297

In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials

M. Kaiser
, L. van Pieterson
, M.A. Verheijen

Research output: Contribution to journal › Article › Academic › peer-review

27 Citations (Scopus)

Abstract

The crystallization of melt-quenched amorphous data marks in a crystalline (Ga₁₅Sb₈₅) phase-change layer from rewritable disks by transmission electron microscopy was discussed. Electron irradiation induced crystallization was obtained at room temperature by using a 120 kV. A comparison with laser-crystallized amorphous marks was made. An electron beam (e ^- beam) induced crystallization started from the amorphous crystalline interface. A dependence of growth velocity on e^- beam intensity and growth direction was observed.

Original language	English
Pages (from-to)	3193-3198
Number of pages	6
Journal	Journal of Applied Physics
Volume	96
Issue number	6
DOIs	https://doi.org/10.1063/1.1775297
Publication status	Published - 15 Sept 2004
Externally published	Yes

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title = "In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials",

abstract = "The crystallization of melt-quenched amorphous data marks in a crystalline (Ga15Sb85) phase-change layer from rewritable disks by transmission electron microscopy was discussed. Electron irradiation induced crystallization was obtained at room temperature by using a 120 kV. A comparison with laser-crystallized amorphous marks was made. An electron beam (e - beam) induced crystallization started from the amorphous crystalline interface. A dependence of growth velocity on e- beam intensity and growth direction was observed.",

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AU - Kaiser, M.

AU - van Pieterson, L.

AU - Verheijen, M.A.

PY - 2004/9/15

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N2 - The crystallization of melt-quenched amorphous data marks in a crystalline (Ga15Sb85) phase-change layer from rewritable disks by transmission electron microscopy was discussed. Electron irradiation induced crystallization was obtained at room temperature by using a 120 kV. A comparison with laser-crystallized amorphous marks was made. An electron beam (e - beam) induced crystallization started from the amorphous crystalline interface. A dependence of growth velocity on e- beam intensity and growth direction was observed.

AB - The crystallization of melt-quenched amorphous data marks in a crystalline (Ga15Sb85) phase-change layer from rewritable disks by transmission electron microscopy was discussed. Electron irradiation induced crystallization was obtained at room temperature by using a 120 kV. A comparison with laser-crystallized amorphous marks was made. An electron beam (e - beam) induced crystallization started from the amorphous crystalline interface. A dependence of growth velocity on e- beam intensity and growth direction was observed.

UR - https://www.scopus.com/pages/publications/4944222322

U2 - 10.1063/1.1775297

DO - 10.1063/1.1775297

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials

Abstract

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