In situ spectroscopic ellipsometry for atomic layer deposition

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Abstract

The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaN2, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.
Original languageEnglish
Pages (from-to)36-41
JournalSociety of Vacuum Coaters Bulletin
Volume2010
Issue numberspring
Publication statusPublished - 2010

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atomic layer epitaxy
ellipsometry
cycles
film thickness
nucleation
energy
synthesis
thin films

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title = "In situ spectroscopic ellipsometry for atomic layer deposition",
abstract = "The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaN2, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.",
author = "E. Langereis and S.B.S. Heil and H.C.M. Knoops and W. Keuning and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
year = "2010",
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In situ spectroscopic ellipsometry for atomic layer deposition. / Langereis, E.; Heil, S.B.S.; Knoops, H.C.M.; Keuning, W.; Sanden, van de, M.C.M.; Kessels, W.M.M.

In: Society of Vacuum Coaters Bulletin, Vol. 2010, No. spring, 2010, p. 36-41.

Research output: Contribution to journalArticleProfessional

TY - JOUR

T1 - In situ spectroscopic ellipsometry for atomic layer deposition

AU - Langereis, E.

AU - Heil, S.B.S.

AU - Knoops, H.C.M.

AU - Keuning, W.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaN2, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.

AB - The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaN2, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.

M3 - Article

VL - 2010

SP - 36

EP - 41

JO - Society of Vacuum Coaters Bulletin

JF - Society of Vacuum Coaters Bulletin

IS - spring

ER -