In-situ spectroscopic ellipsometry for atomic layer deposition

Research output: Contribution to conferenceOther

Abstract

The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the laye-rby-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.
Original languageEnglish
Number of pages8
Publication statusPublished - 2009
Eventconference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01 -
Duration: 1 May 20091 May 2009

Conference

Conferenceconference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01
Period1/05/091/05/09
Other52nd Society of Vacuum Coaters Annual Technical Conference

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Langereis, E., Heil, S. B. S., Knoops, H. C. M., Keuning, W., Sanden, van de, M. C. M., & Kessels, W. M. M. (2009). In-situ spectroscopic ellipsometry for atomic layer deposition. conference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01, .