In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

S.B.S. Heil; P. Kudlacek; E. Langereis; R.A.H. Engeln; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.2357886

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

S.B.S. Heil, P. Kudlacek, E. Langereis, R.A.H. Engeln, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Reaction mechanisms during plasma-assisted at. layer deposition (ALD) of Al2O3 from Al(CH3)3 and O2 plasma were studied by time-resolved quartz crystal microbalance measurements, mass spectrometry, and optical emission spectroscopy. Al(CH3)3 chemisorption on the oxide surface after the plasma pulse releases CH4 products while from the detection of CO, CO2, and H2O in the O2 plasma it is established that surface -CH3 groups are predominantly removed by O radical-driven combustionlike reactions. Also a second pathway exists for -CH3 removal driven by H2O generated in this plasma step. These reaction pathways are expected to be generic for plasma-assisted ALD of oxides from metal org. precursors. [on SciFinder (R)]

Original language	English
Article number	131505
Pages (from-to)	131505-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2357886
Publication status	Published - 2006

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title = "In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3",

abstract = "Reaction mechanisms during plasma-assisted at. layer deposition (ALD) of Al2O3 from Al(CH3)3 and O2 plasma were studied by time-resolved quartz crystal microbalance measurements, mass spectrometry, and optical emission spectroscopy. Al(CH3)3 chemisorption on the oxide surface after the plasma pulse releases CH4 products while from the detection of CO, CO2, and H2O in the O2 plasma it is established that surface -CH3 groups are predominantly removed by O radical-driven combustionlike reactions. Also a second pathway exists for -CH3 removal driven by H2O generated in this plasma step. These reaction pathways are expected to be generic for plasma-assisted ALD of oxides from metal org. precursors. [on SciFinder (R)]",

author = "S.B.S. Heil and P. Kudlacek and E. Langereis and R.A.H. Engeln and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

year = "2006",

doi = "10.1063/1.2357886",

language = "English",

volume = "89",

pages = "131505--1/3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

AU - Heil, S.B.S.

AU - Kudlacek, P.

AU - Langereis, E.

AU - Engeln, R.A.H.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2006

Y1 - 2006

N2 - Reaction mechanisms during plasma-assisted at. layer deposition (ALD) of Al2O3 from Al(CH3)3 and O2 plasma were studied by time-resolved quartz crystal microbalance measurements, mass spectrometry, and optical emission spectroscopy. Al(CH3)3 chemisorption on the oxide surface after the plasma pulse releases CH4 products while from the detection of CO, CO2, and H2O in the O2 plasma it is established that surface -CH3 groups are predominantly removed by O radical-driven combustionlike reactions. Also a second pathway exists for -CH3 removal driven by H2O generated in this plasma step. These reaction pathways are expected to be generic for plasma-assisted ALD of oxides from metal org. precursors. [on SciFinder (R)]

AB - Reaction mechanisms during plasma-assisted at. layer deposition (ALD) of Al2O3 from Al(CH3)3 and O2 plasma were studied by time-resolved quartz crystal microbalance measurements, mass spectrometry, and optical emission spectroscopy. Al(CH3)3 chemisorption on the oxide surface after the plasma pulse releases CH4 products while from the detection of CO, CO2, and H2O in the O2 plasma it is established that surface -CH3 groups are predominantly removed by O radical-driven combustionlike reactions. Also a second pathway exists for -CH3 removal driven by H2O generated in this plasma step. These reaction pathways are expected to be generic for plasma-assisted ALD of oxides from metal org. precursors. [on SciFinder (R)]

U2 - 10.1063/1.2357886

DO - 10.1063/1.2357886

M3 - Article

SN - 0003-6951

VL - 89

SP - 131505-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131505

ER -

In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

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