In situ probing and atomistic simulation of a-Si:H plasma deposition

E.S. Aydil; D. Maroudas; D.C. Marra; W.M.M. Kessels; S. Agarwal; S. Ramalingam; S. Sriraman; M.C.M. Sanden, van de; A. Takano

doi:10.1557/PROC-664-A1.1

In situ probing and atomistic simulation of a-Si:H plasma deposition

E.S. Aydil, D. Maroudas, D.C. Marra, W.M.M. Kessels, S. Agarwal, S. Ramalingam, S. Sriraman, M.C.M. Sanden, van de, A. Takano

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

13 Citations (Scopus)

Abstract

Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A
Editors	M. Stutzmann
Chapter	A1.1
Number of pages	12
DOIs	https://doi.org/10.1557/PROC-664-A1.1
Publication status	Published - 2001
Event	2001MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 16 Apr 2001 → 20 Apr 2001 https://www.mrs.org/spring2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	664
ISSN (Print)	0272-9172

Conference

Conference	2001MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	16/04/01 → 20/04/01
Other
Internet address	https://www.mrs.org/spring2001

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10.1557/PROC-664-A1.1

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Aydil, E. S., Maroudas, D., Marra, D. C., Kessels, W. M. M., Agarwal, S., Ramalingam, S., Sriraman, S., Sanden, van de, M. C. M., & Takano, A. (2001). In situ probing and atomistic simulation of a-Si:H plasma deposition. In M. Stutzmann (Ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings; Vol. 664). https://doi.org/10.1557/PROC-664-A1.1

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title = "In situ probing and atomistic simulation of a-Si:H plasma deposition",

abstract = "Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.",

author = "E.S. Aydil and D. Maroudas and D.C. Marra and W.M.M. Kessels and S. Agarwal and S. Ramalingam and S. Sriraman and {Sanden, van de}, M.C.M. and A. Takano",

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doi = "10.1557/PROC-664-A1.1",

language = "English",

series = "Materials Research Society Symposium Proceedings",

editor = "M. Stutzmann",

booktitle = "Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A",

note = "2001MRS Spring Meeting & Exhibit ; Conference date: 16-04-2001 Through 20-04-2001",

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Aydil, ES, Maroudas, D, Marra, DC, Kessels, WMM, Agarwal, S, Ramalingam, S, Sriraman, S, Sanden, van de, MCM & Takano, A 2001, In situ probing and atomistic simulation of a-Si:H plasma deposition. in M Stutzmann (ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. Materials Research Society Symposium Proceedings, vol. 664, 2001MRS Spring Meeting & Exhibit, San Francisco, California, United States, 16/04/01. https://doi.org/10.1557/PROC-664-A1.1

In situ probing and atomistic simulation of a-Si:H plasma deposition. / Aydil, E.S.; Maroudas, D.; Marra, D.C. et al.
Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. ed. / M. Stutzmann. 2001. (Materials Research Society Symposium Proceedings; Vol. 664).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - In situ probing and atomistic simulation of a-Si:H plasma deposition

AU - Aydil, E.S.

AU - Maroudas, D.

AU - Marra, D.C.

AU - Kessels, W.M.M.

AU - Agarwal, S.

AU - Ramalingam, S.

AU - Sriraman, S.

AU - Sanden, van de, M.C.M.

AU - Takano, A.

PY - 2001

Y1 - 2001

N2 - Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.

AB - Hydrogenated amorphous silicon thin films deposited from SiH4 containing plasmas are used in solar cells and thin film transistors for flat panel displays. Understanding the fundamental microscopic surface processes that lead to Si deposition and H incorporation is important for controlling the film properties. An in situ method based on attenuated total internal reflection Fourier transform infrared (ATR-FTIR) spectroscopy was developed and used to determine the surface coverage of silicon mono-, di-, and tri-hydrides as a function of deposition temperature and ion bombardment flux. Key reactions that take place on the surface during deposition are hypothesized based on the evolution of the surface hydride composition as a function of temperature and ion flux. In conjunction with the experiments, the growth of a-Si:H on H-terminated Si(001)-(2×1) surfaces was simulated through molecular dynamics. The simulation results were compared with experimental measurements to validate the simulations and to provide supporting evidence for radical-surface interaction mechanisms hypothesized based on the infrared spectroscopy data. Experimental measurements of the surface silicon hydride coverage and atomistic simulations are used synergistically to elucidate elementary processes occurring on the surface during a-Si:H deposition.

U2 - 10.1557/PROC-664-A1.1

DO - 10.1557/PROC-664-A1.1

M3 - Conference contribution

T3 - Materials Research Society Symposium Proceedings

BT - Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A

A2 - Stutzmann, M.

T2 - 2001MRS Spring Meeting & Exhibit

Y2 - 16 April 2001 through 20 April 2001

ER -

Aydil ES, Maroudas D, Marra DC, Kessels WMM, Agarwal S, Ramalingam S et al. In situ probing and atomistic simulation of a-Si:H plasma deposition. In Stutzmann M, editor, Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. 2001. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-664-A1.1

In situ probing and atomistic simulation of a-Si:H plasma deposition

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