In Situ GA K edge XANES study of the activation of Ga/ZSM-5 prepared by chemical vapor deposition of trimethylgallium

E.J.M. Hensen, M. Garcia Sanchez, N.J. Rane, P.C.M.M. Magusin, P.H. Liu, K.J. Chao, R.A. Santen, van

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Abstract

The activation of a dimethylgallium/ZSM-5 precursor to well-defined reduced and oxidized species is studied by in situ Ga Kedge XANES. The precursor is prepared by chemical implanting of trimethylgallium on acidic HZSM-5. Subsequent reductionleads to charge-compensating Ga+ species. Direct oxidation of the trimethylgallium precursor leads to various forms of galliumoxide and regeneration of Br¿nsted acid protons. Oxidation of the reduced Ga+ species yields predominantly to GaO+ species.The GaO+ species exhibit a much higher H2/D2 exchange activity than reduced Ga+ species
Original languageEnglish
Pages (from-to)79-85
Number of pages7
JournalCatalysis Letters
Volume101
Issue number1-2
DOIs
Publication statusPublished - 2005

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