In situ film transmittance using the plasma as light source: a case study of thin silicon film deposition in the microcrystalline growth regime

G. Dingemans, M.N. van den Donker, D. Hrunski, A. Gordijn, W.M.M. Kessels, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

In-situ film transmittance using the plasma as light source is introduced as a novel in-situ real-time deposition rate and film thickness monitor. It also enables the estimation of the absorption coefficient at short wavelengths. In the experimental setup the light emitted by the plasma passes through a growing thin silicon film on a transparent substrate and is detected by a simple optical emission spectrometer. From the interference fringes the deposition rate is determined in-situ with high accuracy and on the basis of film absorption the transition from microcrystalline- to amorphous silicon is mapped. Results are corroborated by ex-situ thickness measurements, and solar cell analyses
Original languageEnglish
Title of host publicationProceedings 22nd European Photovoltaic Solar Energy Conference, 3-7 September 2007, Milan, Italy
Place of PublicationMilan, Italy
PublisherWIP-Renewable Energies, Munchen, Germany
ISBN (Print)978-3936338225
Publication statusPublished - 2007
Event22nd European Photovoltaic Solar Energy Conference (EU PVSEC; 2007) -
Duration: 3 Sep 20077 Sep 2007

Conference

Conference22nd European Photovoltaic Solar Energy Conference (EU PVSEC; 2007)
Period3/09/077/09/07
Other22nd European Photovoltaic Solar Energy Conference EU PVSEC

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