TY - JOUR
T1 - In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma
AU - Smets, A.H.M.
AU - Sanden, van de, M.C.M.
AU - Schram, D.C.
PY - 1999
Y1 - 1999
N2 - In this contribution, the results of ellipsometry measurements on the growth of hydrogenated amorphous silicon (a-Si:H) films using an expanding thermal plasma in Ar/H2/SiH4 are presented. The measurements are simulated with an optical model in which roughness and optical parameters of the bulk are time dependent during deposition. From this simulation it can be concluded that in the first 2–13 s of the deposition, depending on the substrate temperature, a top layer containing voids is created. At substrate temperatures above 400 °C and at a silane flow of 10 secs, corresponding to conditions at which high quality a-Si:H is grown, the smallest roughness of 3 nm is measured.
AB - In this contribution, the results of ellipsometry measurements on the growth of hydrogenated amorphous silicon (a-Si:H) films using an expanding thermal plasma in Ar/H2/SiH4 are presented. The measurements are simulated with an optical model in which roughness and optical parameters of the bulk are time dependent during deposition. From this simulation it can be concluded that in the first 2–13 s of the deposition, depending on the substrate temperature, a top layer containing voids is created. At substrate temperatures above 400 °C and at a silane flow of 10 secs, corresponding to conditions at which high quality a-Si:H is grown, the smallest roughness of 3 nm is measured.
U2 - 10.1016/S0040-6090%2898%2901575-2
DO - 10.1016/S0040-6090%2898%2901575-2
M3 - Article
SN - 0040-6090
VL - 343-344
SP - 281
EP - 284
JO - Thin Solid Films
JF - Thin Solid Films
ER -