In situ electrical resistance measurements of Al-Ge films in the TEM using a modified heating holder

M.A. Verheijen, J.J.T.M. Donkers, J.F.P. Thomassen, J.J. Van den Broek, R.A.F. van der Rijt, M.J.J. Dona, C.M. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

A TEM specimen holder has been developed for the measurement of the electrical resistance of a TEM sample as a function of temperature. A Philips TEM heating holder was modified for this purpose. This creates the opportunity to directly correlate changes in the resistance to microstructural changes as a function of temperature. The microstructure of Al-Ge films of several thicknesses has been studied in an in-situ annealing experiment and has been recorded on videotape, while simultaneously acquiring resistance data. These in-situ TEM studies confirm that the irreversible decrease in resistance of these films is caused by crystallisation. During this transition segregation occurs, resulting in crystalline Al and Ge phases.

Original languageEnglish
Title of host publicationPolycrystalline metal and magnetic thin films -2000 : symposium held April 25-27, 2000, San Francisco, California, USA
EditorsB.M. Clemens, L. Gignac, J.M. Maclaren
Place of PublicationWarrendale
PublisherMaterials Research Society
ISBN (Print)1-55899-523-4
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes
EventPolycrystalline Metal and Magnetic Thin Films-2000 - San Francisco, CA, United States
Duration: 25 Apr 200027 Apr 2000

Publication series

NameMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume615
ISSN (Print)0272-9172

Conference

ConferencePolycrystalline Metal and Magnetic Thin Films-2000
CountryUnited States
CitySan Francisco, CA
Period25/04/0027/04/00

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