In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption

Richard van de Sanden; Igor Aarts; Andrew Pipino; Erwin Kessels

In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption

Richard van de Sanden, Igor Aarts, Andrew Pipino, Erwin Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Advances in In Situ Characterization of Film Growth and Interface Processes
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	632-650
Number of pages	19
ISBN (Print)	9781604234350
Publication status	Published - 1 Dec 2006
Event	2006 Materials Research Society Fall Meeting - Boston, MA, United States Duration: 27 Nov 2006 → 1 Dec 2006

Publication series

Name	Materials Research Society symposium proceedings
Volume	967
ISSN (Print)	0272-9172

Conference

Conference	2006 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	27/11/06 → 1/12/06

Cite this

@inproceedings{98cfeea7f24c4e40aa8314a4b96433af,

title = "In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption",

author = "{van de Sanden}, Richard and Igor Aarts and Andrew Pipino and Erwin Kessels",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "9781604234350",

series = "Materials Research Society symposium proceedings",

publisher = "Materials Research Society",

pages = "632--650",

booktitle = "Advances in In Situ Characterization of Film Growth and Interface Processes",

address = "United States",

note = "2006 Materials Research Society Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

van de Sanden, R, Aarts, I, Pipino, A & Kessels, E 2006, In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption. in Advances in In Situ Characterization of Film Growth and Interface Processes. Materials Research Society symposium proceedings, vol. 967, Materials Research Society, Warrendale, pp. 632-650, 2006 Materials Research Society Fall Meeting, Boston, MA, United States, 27/11/06.

In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption. / van de Sanden, Richard; Aarts, Igor; Pipino, Andrew et al.
Advances in In Situ Characterization of Film Growth and Interface Processes. Warrendale: Materials Research Society, 2006. p. 632-650 (Materials Research Society symposium proceedings; Vol. 967).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - In situ defect spectroscopy

T2 - 2006 Materials Research Society Fall Meeting

AU - van de Sanden, Richard

AU - Aarts, Igor

AU - Pipino, Andrew

AU - Kessels, Erwin

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=55949114725&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:55949114725

SN - 9781604234350

T3 - Materials Research Society symposium proceedings

SP - 632

EP - 650

BT - Advances in In Situ Characterization of Film Growth and Interface Processes

PB - Materials Research Society

CY - Warrendale

Y2 - 27 November 2006 through 1 December 2006

ER -

In situ defect spectroscopy: Probing dangling bonds during a-Si:H growth by subgap absorption

Publication series

Conference

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