In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption

W.M.M. Kessels; I.M.P. Aarts; A.C.R. Pipino; M.C.M. Sanden, van de

doi:10.1109/WCPEC.2006.279825

In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption

W.M.M. Kessels, I.M.P. Aarts, A.C.R. Pipino, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented

Original language	English
Title of host publication	Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers
Pages	4-
ISBN (Print)	1-424-40016-3
DOIs	https://doi.org/10.1109/WCPEC.2006.279825
Publication status	Published - 2006
Event	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 - Duration: 1 Jan 2006 → …

Conference

Conference	conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Period	1/01/06 → …
Other	WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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10.1109/WCPEC.2006.279825

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Kessels, W. M. M., Aarts, I. M. P., Pipino, A. C. R., & Sanden, van de, M. C. M. (2006). In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006 (pp. 4-). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/WCPEC.2006.279825

Kessels, W.M.M. ; Aarts, I.M.P. ; Pipino, A.C.R. et al. / In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption. Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA : Institute of Electrical and Electronics Engineers, 2006. pp. 4-

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title = "In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption",

abstract = "This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented",

author = "W.M.M. Kessels and I.M.P. Aarts and A.C.R. Pipino and \{Sanden, van de\}, M.C.M.",

year = "2006",

doi = "10.1109/WCPEC.2006.279825",

language = "English",

isbn = "1-424-40016-3",

pages = "4--",

booktitle = "Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 ; Conference date: 01-01-2006",

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Kessels, WMM, Aarts, IMP, Pipino, ACR & Sanden, van de, MCM 2006, In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption. in Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Institute of Electrical and Electronics Engineers, Piscataway, NJ, USA, pp. 4-, conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12, 1/01/06. https://doi.org/10.1109/WCPEC.2006.279825

In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption. / Kessels, W.M.M.; Aarts, I.M.P.; Pipino, A.C.R. et al.
Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers, 2006. p. 4-.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Sanden, van de, M.C.M.

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N2 - This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented

AB - This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented

U2 - 10.1109/WCPEC.2006.279825

DO - 10.1109/WCPEC.2006.279825

M3 - Conference contribution

SN - 1-424-40016-3

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BT - Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006

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Kessels WMM, Aarts IMP, Pipino ACR, Sanden, van de MCM. In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption. In Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006. Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers. 2006. p. 4- doi: 10.1109/WCPEC.2006.279825

In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption

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