In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption

W.M.M. Kessels, I.M.P. Aarts, A.C.R. Pipino, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented
Original languageEnglish
Title of host publicationConference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages4-
ISBN (Print)1-424-40016-3
DOIs
Publication statusPublished - 2006
Eventconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 -
Duration: 1 Jan 2006 → …

Conference

Conferenceconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Period1/01/06 → …
OtherWCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

Fingerprint Dive into the research topics of 'In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption'. Together they form a unique fingerprint.

Cite this