TY - JOUR
T1 - In-Plane Nanowire Growth of Topological Crystalline Insulator Pb1 − xSnxTe
AU - Schellingerhout, Sander G.
AU - Bergamaschini, Roberto
AU - Verheijen, Marcel A.
AU - Montalenti, Francesco
AU - Miglio, Leo
AU - Bakkers, Erik P.A.M.
PY - 2023/12/8
Y1 - 2023/12/8
N2 - Predicted topological crystalline insulators such as Pb1 − xSnxTe are an interesting candidate for applications in quantum technology, as they can host spin-polarized surface states. Moreover, in the nanowire geometry, a quasi-1D system can be realized with potential applications exploiting Majorana fermions. Herein, the selective area growth of Pb1 − xSnxTe islands and nanowires over the full range of x is demonstrated, and their in-depth growth dynamics and faceting are analyzed. By transmission electron microscopy, the single-crystalline and defect-free nature of the grown material and the homogeneous, controllable Pb/Sn ratio in the nanowires is confirmed. With support of phase-field growth simulations, it is shown that the crystal faceting mainly follows the driving force of surface energy minimization, favoring the lowest energy {200} surfaces. A kinetic enhancement of adatom incorporation on {110} facets is recognized to limit their extension with respect to {200} and {111} facets. After inspecting all possible in-plane orientations, we identify the 〈110〉 directions as the optimal candidate for the growth of high-quality and perfectly straight Pb1 − xSnxTe nanowires, enabling the design of complex networks due to their threefold symmetry. This work opens the way to systematic transport investigation of the carrier density in Pb1 − xSnxTe nanowires and can facilitate further optimization of the Pb1 − xSnxTe system.
AB - Predicted topological crystalline insulators such as Pb1 − xSnxTe are an interesting candidate for applications in quantum technology, as they can host spin-polarized surface states. Moreover, in the nanowire geometry, a quasi-1D system can be realized with potential applications exploiting Majorana fermions. Herein, the selective area growth of Pb1 − xSnxTe islands and nanowires over the full range of x is demonstrated, and their in-depth growth dynamics and faceting are analyzed. By transmission electron microscopy, the single-crystalline and defect-free nature of the grown material and the homogeneous, controllable Pb/Sn ratio in the nanowires is confirmed. With support of phase-field growth simulations, it is shown that the crystal faceting mainly follows the driving force of surface energy minimization, favoring the lowest energy {200} surfaces. A kinetic enhancement of adatom incorporation on {110} facets is recognized to limit their extension with respect to {200} and {111} facets. After inspecting all possible in-plane orientations, we identify the 〈110〉 directions as the optimal candidate for the growth of high-quality and perfectly straight Pb1 − xSnxTe nanowires, enabling the design of complex networks due to their threefold symmetry. This work opens the way to systematic transport investigation of the carrier density in Pb1 − xSnxTe nanowires and can facilitate further optimization of the Pb1 − xSnxTe system.
KW - nanowires
KW - PbSnTe
KW - selective area growth
KW - topological insulators
UR - http://www.scopus.com/inward/record.url?scp=85168394631&partnerID=8YFLogxK
U2 - 10.1002/adfm.202305542
DO - 10.1002/adfm.202305542
M3 - Article
AN - SCOPUS:85168394631
SN - 1616-301X
VL - 33
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 50
M1 - 2305542
ER -