Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

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Abstract

From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported
Original languageEnglish
Pages (from-to)1027-1029
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume19
Issue number3
DOIs
Publication statusPublished - 2001

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