Improved thermally stable surface and bulk passivation of PECVD SiN X:H using N2 and SiH4

A.W. Weeber; H. C. Rieffe; M. J.A.A. Goris; J. Hong; W. M.M. Kessels; M. C.M. van de Sanden; W. J. Soppe

doi:10.1109/WCPEC.2003.1306114

Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄

A.W. Weeber, H. C. Rieffe, M. J.A.A. Goris, J. Hong, W. M.M. Kessels, M. C.M. van de Sanden, W. J. Soppe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Excellent and thermally stable surface passivation of SiN_x:H grown using N₂ and SiH₄ as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH₃ and SiH ₄. Additionally, we found that the bulk passivating properties of SiN_x:H deposited with N₂+SiH₄ are as good as that of the standard SiN_x:H deposited with NH₃+SiH ₄. Absorption at shorter wavelengths in SiN_x:H layers deposited with N₂+SiH₄ is somewhat higher. Solar cell efficiencies are comparable for both nitrides.

Original language	English
Title of host publication	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Publisher	Arisumi Printing Inc
Pages	1131-1134
Number of pages	4
Volume	B
ISBN (Print)	4990181603, 9784990181604
DOIs	https://doi.org/10.1109/WCPEC.2003.1306114
Publication status	Published - 1 Dec 2003
Event	3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Conference

Conference	3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

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10.1109/WCPEC.2003.1306114

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Weeber, A. W., Rieffe, H. C., Goris, M. J. A. A., Hong, J., Kessels, W. M. M., van de Sanden, M. C. M., & Soppe, W. J. (2003). Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion (Vol. B, pp. 1131-1134). Arisumi Printing Inc. https://doi.org/10.1109/WCPEC.2003.1306114

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title = "Improved thermally stable surface and bulk passivation of PECVD SiN X:H using N2 and SiH4",

abstract = "Excellent and thermally stable surface passivation of SiNx:H grown using N2 and SiH4 as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH3 and SiH 4. Additionally, we found that the bulk passivating properties of SiNx:H deposited with N2+SiH4 are as good as that of the standard SiNx:H deposited with NH3+SiH 4. Absorption at shorter wavelengths in SiNx:H layers deposited with N2+SiH4 is somewhat higher. Solar cell efficiencies are comparable for both nitrides.",

author = "A.W. Weeber and Rieffe, {H. C.} and Goris, {M. J.A.A.} and J. Hong and Kessels, {W. M.M.} and {van de Sanden}, {M. C.M.} and Soppe, {W. J.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1109/WCPEC.2003.1306114",

language = "English",

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editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

publisher = "Arisumi Printing Inc",

note = "3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

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Weeber, AW, Rieffe, HC, Goris, MJAA, Hong, J, Kessels, WMM , van de Sanden, MCM & Soppe, WJ 2003, Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. vol. B, Arisumi Printing Inc, pp. 1131-1134, 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03. https://doi.org/10.1109/WCPEC.2003.1306114

Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄. / Weeber, A.W.; Rieffe, H. C.; Goris, M. J.A.A. et al.
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. Vol. B Arisumi Printing Inc, 2003. p. 1131-1134.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Improved thermally stable surface and bulk passivation of PECVD SiN X:H using N2 and SiH4

AU - Weeber, A.W.

AU - Rieffe, H. C.

AU - Goris, M. J.A.A.

AU - Hong, J.

AU - Kessels, W. M.M.

AU - van de Sanden, M. C.M.

AU - Soppe, W. J.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Excellent and thermally stable surface passivation of SiNx:H grown using N2 and SiH4 as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH3 and SiH 4. Additionally, we found that the bulk passivating properties of SiNx:H deposited with N2+SiH4 are as good as that of the standard SiNx:H deposited with NH3+SiH 4. Absorption at shorter wavelengths in SiNx:H layers deposited with N2+SiH4 is somewhat higher. Solar cell efficiencies are comparable for both nitrides.

AB - Excellent and thermally stable surface passivation of SiNx:H grown using N2 and SiH4 as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH3 and SiH 4. Additionally, we found that the bulk passivating properties of SiNx:H deposited with N2+SiH4 are as good as that of the standard SiNx:H deposited with NH3+SiH 4. Absorption at shorter wavelengths in SiNx:H layers deposited with N2+SiH4 is somewhat higher. Solar cell efficiencies are comparable for both nitrides.

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U2 - 10.1109/WCPEC.2003.1306114

DO - 10.1109/WCPEC.2003.1306114

M3 - Conference contribution

SN - 4990181603

SN - 9784990181604

VL - B

SP - 1131

EP - 1134

BT - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

PB - Arisumi Printing Inc

T2 - 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Weeber AW, Rieffe HC, Goris MJAA, Hong J, Kessels WMM , van de Sanden MCM et al. Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. Vol. B. Arisumi Printing Inc. 2003. p. 1131-1134 doi: 10.1109/WCPEC.2003.1306114

Improved thermally stable surface and bulk passivation of PECVD SiN _X:H using N₂ and SiH₄

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