Abstract
A method is presented to improve accuracy in low-frequency noise characterization of bipolar transistors by using both a voltage amplifier and transimpedance amplifiers
Original language | English |
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Pages (from-to) | 1772-1773 |
Number of pages | 2 |
Journal | IEEE Transactions on Electron Devices |
Volume | 47 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2000 |