Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture

S. Xie, R. Luttge

Research output: Contribution to journalArticleAcademicpeer-review

14 Citations (Scopus)

Abstract

In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We investigated nanoscaffolds with periodicities ranging from 200 nm to 2000 nm, and found that the samples with a period between 400 nm and 600 nm and a height of 118 nm showed highly ordered regions of neurites in a newly formed network with a preferential alignment tendency for astrocytes. Live/dead staining results showed that different materials, such as silicon, glass, and imprinted resist are rendered biocompatible by coating with polyethylenimine. This coating therefore allows for a free choice of scaffold materials and promotes good cell-substrate adhesion. From our results we conclude particular length scales of nanoscaffold can impose a degree of order on cell spreading behavior in a complex cellular brain-on-a-chip network, which could thus be used to emulate ordered brain regions and their function in vitro. © 2014 Elsevier B.V. All rights reserved.
LanguageEnglish
Pages30-36
Number of pages7
JournalMicroelectronic Engineering
Volume124
DOIs
StatePublished - 2014

Fingerprint

Polyethyleneimine
Cell growth
Cell culture
Lithography
Brain
lithography
Coatings
brain
Silicon
cells
Scaffolds
coatings
Adhesion
cues
staining
Glass
flash
periodic variations
tendencies
adhesion

Cite this

@article{bf0cbfb68f194352bd27f010a308a6cc,
title = "Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture",
abstract = "In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We investigated nanoscaffolds with periodicities ranging from 200 nm to 2000 nm, and found that the samples with a period between 400 nm and 600 nm and a height of 118 nm showed highly ordered regions of neurites in a newly formed network with a preferential alignment tendency for astrocytes. Live/dead staining results showed that different materials, such as silicon, glass, and imprinted resist are rendered biocompatible by coating with polyethylenimine. This coating therefore allows for a free choice of scaffold materials and promotes good cell-substrate adhesion. From our results we conclude particular length scales of nanoscaffold can impose a degree of order on cell spreading behavior in a complex cellular brain-on-a-chip network, which could thus be used to emulate ordered brain regions and their function in vitro. {\circledC} 2014 Elsevier B.V. All rights reserved.",
author = "S. Xie and R. Luttge",
year = "2014",
doi = "10.1016/j.mee.2014.04.012",
language = "English",
volume = "124",
pages = "30--36",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture. / Xie, S.; Luttge, R.

In: Microelectronic Engineering, Vol. 124, 2014, p. 30-36.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Imprint lithography provides topographical nanocues to guide cell growth in primary cortical cell culture

AU - Xie,S.

AU - Luttge,R.

PY - 2014

Y1 - 2014

N2 - In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We investigated nanoscaffolds with periodicities ranging from 200 nm to 2000 nm, and found that the samples with a period between 400 nm and 600 nm and a height of 118 nm showed highly ordered regions of neurites in a newly formed network with a preferential alignment tendency for astrocytes. Live/dead staining results showed that different materials, such as silicon, glass, and imprinted resist are rendered biocompatible by coating with polyethylenimine. This coating therefore allows for a free choice of scaffold materials and promotes good cell-substrate adhesion. From our results we conclude particular length scales of nanoscaffold can impose a degree of order on cell spreading behavior in a complex cellular brain-on-a-chip network, which could thus be used to emulate ordered brain regions and their function in vitro. © 2014 Elsevier B.V. All rights reserved.

AB - In this paper, we describe a technology platform to study the effect of nanocues on the cell growth direction in primary cortical cell culture. Topographical cues to cells are provided using nanoscale features created by Jet and Flash Imprint Lithography, coated with polyethylenimine. We investigated nanoscaffolds with periodicities ranging from 200 nm to 2000 nm, and found that the samples with a period between 400 nm and 600 nm and a height of 118 nm showed highly ordered regions of neurites in a newly formed network with a preferential alignment tendency for astrocytes. Live/dead staining results showed that different materials, such as silicon, glass, and imprinted resist are rendered biocompatible by coating with polyethylenimine. This coating therefore allows for a free choice of scaffold materials and promotes good cell-substrate adhesion. From our results we conclude particular length scales of nanoscaffold can impose a degree of order on cell spreading behavior in a complex cellular brain-on-a-chip network, which could thus be used to emulate ordered brain regions and their function in vitro. © 2014 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.mee.2014.04.012

DO - 10.1016/j.mee.2014.04.012

M3 - Article

VL - 124

SP - 30

EP - 36

JO - Microelectronic Engineering

T2 - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -