Importance of defect density near the p-i interface for a-Si:H solar cell performance

B.A. Korevaar, C. Smit, R.A.C.M.M. Swaaij, van, D.C. Schram, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)


A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.
Original languageEnglish
Title of host publicationAmorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.
EditorsM. Stutzmann
Place of PublicationWarrendale, Pa.
PublisherMaterials Research Society
ISBN (Print)1-558-99600-1
Publication statusPublished - 2001
Event2001MRS Spring Meeting & Exhibit - San Francisco, United States
Duration: 16 Apr 200120 Apr 2001

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2001MRS Spring Meeting & Exhibit
Country/TerritoryUnited States
CitySan Francisco
Internet address


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