Importance of defect density near the p-i interface for a-Si:H solar cell performance

B.A. Korevaar; C. Smit; R.A.C.M.M. Swaaij, van; D.C. Schram; M.C.M. Sanden, van de

doi:10.1557/PROC-664-A24.4

Importance of defect density near the p-i interface for a-Si:H solar cell performance

B.A. Korevaar, C. Smit, R.A.C.M.M. Swaaij, van, D.C. Schram, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.
Editors	M. Stutzmann
Place of Publication	Warrendale, Pa.
Publisher	Materials Research Society
Pages	A24.4
ISBN (Print)	1-558-99600-1
DOIs	https://doi.org/10.1557/PROC-664-A24.4
Publication status	Published - 2001
Event	2001MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 16 Apr 2001 → 20 Apr 2001 https://www.mrs.org/spring2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	664
ISSN (Print)	0272-9172

Conference

Conference	2001MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	16/04/01 → 20/04/01
Other
Internet address	https://www.mrs.org/spring2001

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10.1557/PROC-664-A24.4

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Korevaar, B. A., Smit, C., Swaaij, van, R. A. C. M. M., Schram, D. C., & Sanden, van de, M. C. M. (2001). Importance of defect density near the p-i interface for a-Si:H solar cell performance. In M. Stutzmann (Ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A. (pp. A24.4). (Materials Research Society Symposium Proceedings; Vol. 664). Materials Research Society. https://doi.org/10.1557/PROC-664-A24.4

Korevaar, B.A. ; Smit, C. ; Swaaij, van, R.A.C.M.M. et al. / Importance of defect density near the p-i interface for a-Si:H solar cell performance. Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.. editor / M. Stutzmann. Warrendale, Pa. : Materials Research Society, 2001. pp. A24.4 (Materials Research Society Symposium Proceedings).

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title = "Importance of defect density near the p-i interface for a-Si:H solar cell performance",

abstract = "A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 {\AA}/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.",

author = "B.A. Korevaar and C. Smit and {Swaaij, van}, R.A.C.M.M. and D.C. Schram and {Sanden, van de}, M.C.M.",

year = "2001",

doi = "10.1557/PROC-664-A24.4",

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Korevaar, BA, Smit, C, Swaaij, van, RACMM, Schram, DC & Sanden, van de, MCM 2001, Importance of defect density near the p-i interface for a-Si:H solar cell performance. in M Stutzmann (ed.), Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.. Materials Research Society Symposium Proceedings, vol. 664, Materials Research Society, Warrendale, Pa., pp. A24.4, 2001MRS Spring Meeting & Exhibit, San Francisco, California, United States, 16/04/01. https://doi.org/10.1557/PROC-664-A24.4

Importance of defect density near the p-i interface for a-Si:H solar cell performance. / Korevaar, B.A.; Smit, C.; Swaaij, van, R.A.C.M.M. et al.
Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.. ed. / M. Stutzmann. Warrendale, Pa.: Materials Research Society, 2001. p. A24.4 (Materials Research Society Symposium Proceedings; Vol. 664).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Korevaar, B.A.

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N2 - A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.

AB - A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.

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Korevaar BA, Smit C, Swaaij, van RACMM, Schram DC , Sanden, van de MCM. Importance of defect density near the p-i interface for a-Si:H solar cell performance. In Stutzmann M, editor, Amorphous and heterogeneous silicon-based films - 2001 : symposium held [at the 2001 MRS spring meeting,] April 16 - 20, 2001, San Francisco, California, U.S.A.. Warrendale, Pa.: Materials Research Society. 2001. p. A24.4. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-664-A24.4

Importance of defect density near the p-i interface for a-Si:H solar cell performance

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