Impedance matching for high-speed InP integrated electro-absorption modulators

Marija Trajkovic; Fabrice Blache; Karim Mekhazni; Helene Debregeas; E. Haan; L.M. Augustin; Kevin Williams; Xaveer Leijtens

doi:10.1109/IPCon.2018.8527186

Impedance matching for high-speed InP integrated electro-absorption modulators

Marija Trajkovic, Fabrice Blache, Karim Mekhazni, Helene Debregeas, E. Haan, L.M. Augustin, Kevin Williams, Xaveer Leijtens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

1 Downloads (Pure)

Abstract

We study the influence of electrical connection methods on the high speed performance of electro-absorption modulators (EAMs). We report the reflection parameter S 11 below -10dB up to 22GHz and 32GHz bandwidth for a mounted EAM chip-on-carrier, with input alumina transmission line and output termination load.

Original language	English
Title of host publication	31st Annual Conference of the IEEE Photonics Society, IPC 2018
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	2
ISBN (Electronic)	978-1-5386-5358-6
ISBN (Print)	978-1-5386-5359-3
DOIs	https://doi.org/10.1109/IPCon.2018.8527186
Publication status	Published - 2018
Event	31st IEEE Photonics Conference (IPC 2018) - Reston, United States Duration: 30 Sep 2018 → 4 Oct 2018 Conference number: 31 https://ieee-ipc.org/

Conference

Conference	31st IEEE Photonics Conference (IPC 2018)
Abbreviated title	IPC
Country	United States
City	Reston
Period	30/09/18 → 4/10/18
Internet address	https://ieee-ipc.org/

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Keywords

Chip-on-carrier
E/O bandwidth
Electro-absorption modulator
Reflection parameter
Termination load

Cite this

Trajkovic, M., Blache, F., Mekhazni, K., Debregeas, H., Haan, E., Augustin, L. M., ... Leijtens, X. (2018). Impedance matching for high-speed InP integrated electro-absorption modulators. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 [8527186] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2018.8527186

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title = "Impedance matching for high-speed InP integrated electro-absorption modulators",

abstract = "We study the influence of electrical connection methods on the high speed performance of electro-absorption modulators (EAMs). We report the reflection parameter S 11 below -10dB up to 22GHz and 32GHz bandwidth for a mounted EAM chip-on-carrier, with input alumina transmission line and output termination load.",

keywords = "Chip-on-carrier, E/O bandwidth, Electro-absorption modulator, Reflection parameter, Termination load",

author = "Marija Trajkovic and Fabrice Blache and Karim Mekhazni and Helene Debregeas and E. Haan and L.M. Augustin and Kevin Williams and Xaveer Leijtens",

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Trajkovic, M, Blache, F, Mekhazni, K, Debregeas, H, Haan, E, Augustin, LM, Williams, K & Leijtens, X 2018, Impedance matching for high-speed InP integrated electro-absorption modulators. in 31st Annual Conference of the IEEE Photonics Society, IPC 2018., 8527186, Institute of Electrical and Electronics Engineers, Piscataway, 31st IEEE Photonics Conference (IPC 2018), Reston, United States, 30/09/18. https://doi.org/10.1109/IPCon.2018.8527186

Impedance matching for high-speed InP integrated electro-absorption modulators. / Trajkovic, Marija; Blache, Fabrice; Mekhazni, Karim; Debregeas, Helene; Haan, E.; Augustin, L.M.; Williams, Kevin ; Leijtens, Xaveer.

31st Annual Conference of the IEEE Photonics Society, IPC 2018. Piscataway : Institute of Electrical and Electronics Engineers, 2018. 8527186.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Impedance matching for high-speed InP integrated electro-absorption modulators

AU - Trajkovic, Marija

AU - Blache, Fabrice

AU - Mekhazni, Karim

AU - Debregeas, Helene

AU - Haan, E.

AU - Augustin, L.M.

AU - Williams, Kevin

AU - Leijtens, Xaveer

PY - 2018

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N2 - We study the influence of electrical connection methods on the high speed performance of electro-absorption modulators (EAMs). We report the reflection parameter S 11 below -10dB up to 22GHz and 32GHz bandwidth for a mounted EAM chip-on-carrier, with input alumina transmission line and output termination load.

AB - We study the influence of electrical connection methods on the high speed performance of electro-absorption modulators (EAMs). We report the reflection parameter S 11 below -10dB up to 22GHz and 32GHz bandwidth for a mounted EAM chip-on-carrier, with input alumina transmission line and output termination load.

KW - Chip-on-carrier

KW - E/O bandwidth

KW - Electro-absorption modulator

KW - Reflection parameter

KW - Termination load

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DO - 10.1109/IPCon.2018.8527186

M3 - Conference contribution

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BT - 31st Annual Conference of the IEEE Photonics Society, IPC 2018

PB - Institute of Electrical and Electronics Engineers

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Access to Document

10.1109/IPCon.2018.8527186

Link to publication in Scopus