Impedance matching for high-speed InP integrated electro-absorption modulators

Marija Trajkovic, Fabrice Blache, Karim Mekhazni, Helene Debregeas, E. Haan, L.M. Augustin, Kevin Williams, Xaveer Leijtens

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
1 Downloads (Pure)

Abstract

We study the influence of electrical connection methods on the high speed performance of electro-absorption modulators (EAMs). We report the reflection parameter S 11 below -10dB up to 22GHz and 32GHz bandwidth for a mounted EAM chip-on-carrier, with input alumina transmission line and output termination load.
Original languageEnglish
Title of host publication31st Annual Conference of the IEEE Photonics Society, IPC 2018
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages2
ISBN (Electronic)978-1-5386-5358-6
ISBN (Print)978-1-5386-5359-3
DOIs
Publication statusPublished - 2018
Event31st IEEE Photonics Conference (IPC 2018) - Reston, United States
Duration: 30 Sep 20184 Oct 2018
Conference number: 31
https://ieee-ipc.org/

Conference

Conference31st IEEE Photonics Conference (IPC 2018)
Abbreviated titleIPC
CountryUnited States
CityReston
Period30/09/184/10/18
Internet address

    Fingerprint

Keywords

  • Chip-on-carrier
  • E/O bandwidth
  • Electro-absorption modulator
  • Reflection parameter
  • Termination load

Cite this

Trajkovic, M., Blache, F., Mekhazni, K., Debregeas, H., Haan, E., Augustin, L. M., ... Leijtens, X. (2018). Impedance matching for high-speed InP integrated electro-absorption modulators. In 31st Annual Conference of the IEEE Photonics Society, IPC 2018 [8527186] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IPCon.2018.8527186