Impact of the deposition and annealing temperature on the silicon surface passivation of ALD Al2O3 films

S. Bordihn, I. Kiesow, V. Mertens, P. Engelhart, J.W. Müller, W.M.M. Kessels

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)
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Abstract

The effect of the deposition and annealing temperature on the surface passivation of atomic layer deposited Al2O3 films was investigated on n-type Cz silicon wafers. The deposition temperature was varied between 200 and 500°C and the annealing temperature between 300 and 450°C, respectively. Films prepared at 200 and 300°C showed an improvement of surface passivation with increasing anneal temperature. The Al2O3 films grown at 400 and 500°C did not improve by annealing. By corona charging experiments it was revealed that the improvement in surface passivation with increasing anneal temperature of films grown at 300°C can be attributed to a significant increase in chemical passivation with a minor increase in field-effect passivation. For Cz and FZ wafers an identical surface passivation was achieved with the chemical passivation being lower for Cz wafers due to the surface morphology and the field-effect passivation being quite similar. Consequently the field-effect passivation was found to be the more important passivation mechanism.

Original languageEnglish
Pages (from-to)396-401
Number of pages6
JournalEnergy Procedia
Volume27
DOIs
Publication statusPublished - 1 Jan 2012
Event2nd International Conference on Silicon Photovoltaics (SiliconPV 2012) - Leuven, Belgium
Duration: 3 Apr 20125 Apr 2012
Conference number: 2
http://2012.siliconpv.com/cms

Keywords

  • Deposition and anneal temperature
  • Surface passivation

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