Impact of the case temperature on the reliability of SiC MOSFETs under repetitive short circuit tests

He Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.

Original languageEnglish
Title of host publication2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
PublisherInstitute of Electrical and Electronics Engineers
Pages332-337
Number of pages6
ISBN (Electronic)978-1-5386-8330-9
ISBN (Print)978-1-5386-8331-6
DOIs
Publication statusPublished - 24 May 2019
Externally publishedYes
Event34th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2019) - Anaheim, United States
Duration: 17 Mar 201921 Mar 2019

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2019)
Country/TerritoryUnited States
CityAnaheim
Period17/03/1921/03/19

Keywords

  • Case temperature
  • Power MOSFET
  • Short-circuit test
  • Silicon carbide

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