Impact of silicidation on the excess noise behaviour of MOS transistors

E.P. Vandamme, L.K.J. Vandamme, C. Claeys, E. Simoen, R.J. Schreutelkamp

Research output: Contribution to journalArticleAcademicpeer-review

46 Citations (Scopus)

Abstract

The excess noise behaviour of silicided and non-silicided p- and n-channel MOST% biased in the ohmic region, has been investigated. Only a minor difference in noise and series resistance could be seen for the n-channel MOSTs. However, the noise in the non-silicided p-MOSTs was dominated by the noise in the series resistance. The series resistance for the non-silicided p-MOSTs was more than four times higher than for the silicided p-MOSTs. A modified model for the l/fnoise equivalent circuit is proposed, showing good agreement with experimental results and explaining the observed trend S,,ccI$’ with 0 c m <4. The classical geometry dependence of the current noise in MOSTs is only valid if the noise in the series resistance is negligible.
Original languageEnglish
Pages (from-to)1893-1897
Number of pages5
JournalSolid-State Electronics
Volume38
Issue number11
DOIs
Publication statusPublished - 1995

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