TY - JOUR
T1 - Impact of silicidation on the excess noise behaviour of MOS transistors
AU - Vandamme, E.P.
AU - Vandamme, L.K.J.
AU - Claeys, C.
AU - Simoen, E.
AU - Schreutelkamp, R.J.
PY - 1995
Y1 - 1995
N2 - The excess noise behaviour of silicided and non-silicided p- and n-channel MOST% biased in the ohmic region, has been investigated. Only a minor difference in noise and series resistance could be seen for the n-channel MOSTs. However, the noise in the non-silicided p-MOSTs was dominated by the noise in the series resistance. The series resistance for the non-silicided p-MOSTs was more than four times higher than for the silicided p-MOSTs. A modified model for the l/fnoise equivalent circuit is proposed, showing good agreement with experimental results and explaining the observed trend S,,ccI$’ with
0 c m <4. The classical geometry dependence of the current noise in MOSTs is only valid if the noise in the series resistance is negligible.
AB - The excess noise behaviour of silicided and non-silicided p- and n-channel MOST% biased in the ohmic region, has been investigated. Only a minor difference in noise and series resistance could be seen for the n-channel MOSTs. However, the noise in the non-silicided p-MOSTs was dominated by the noise in the series resistance. The series resistance for the non-silicided p-MOSTs was more than four times higher than for the silicided p-MOSTs. A modified model for the l/fnoise equivalent circuit is proposed, showing good agreement with experimental results and explaining the observed trend S,,ccI$’ with
0 c m <4. The classical geometry dependence of the current noise in MOSTs is only valid if the noise in the series resistance is negligible.
U2 - 10.1016/0038-1101(95)00011-H
DO - 10.1016/0038-1101(95)00011-H
M3 - Article
SN - 0038-1101
VL - 38
SP - 1893
EP - 1897
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 11
ER -