Impact of resistive-open defects on the heat current of TAS-MRAM architectures

Joao Azevedo; Arnaud Virazel; Alberto Bosio; Luigi Dilillo; Patrick Girard; Aida Todri-Sanial; G. Prenat; Jérémy Alvarez-Herault; Ken Mackay

doi:10.1109/DATE.2012.6176526

Impact of resistive-open defects on the heat current of TAS-MRAM architectures

Joao Azevedo, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, G. Prenat, Jérémy Alvarez-Herault, Ken Mackay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

Abstract

Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4×4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture.

Original language	English
Title of host publication	2012 Design, Automation & Test in Europe Conference & Exhibition (DATE)
Publisher	Institute of Electrical and Electronics Engineers
Pages	532-537
Number of pages	6
ISBN (Print)	978-1-4577-2145-8
DOIs	https://doi.org/10.1109/DATE.2012.6176526
Publication status	Published - 2012
Externally published	Yes
Event	15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012 - ICC, Dresden, Germany Duration: 12 Mar 2012 → 16 Mar 2012 Conference number: 15 https://www.date-conference.com/date12/

Conference

Conference	15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012
Abbreviated title	DATE 2012
Country/Territory	Germany
City	Dresden
Period	12/03/12 → 16/03/12
Other
Internet address	https://www.date-conference.com/date12/

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10.1109/DATE.2012.6176526

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Azevedo, J., Virazel, A., Bosio, A., Dilillo, L., Girard, P., Todri-Sanial, A., Prenat, G., Alvarez-Herault, J., & Mackay, K. (2012). Impact of resistive-open defects on the heat current of TAS-MRAM architectures. In 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE) (pp. 532-537). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/DATE.2012.6176526

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title = "Impact of resistive-open defects on the heat current of TAS-MRAM architectures",

abstract = "Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4×4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture.",

author = "Joao Azevedo and Arnaud Virazel and Alberto Bosio and Luigi Dilillo and Patrick Girard and Aida Todri-Sanial and G. Prenat and J{\'e}r{\'e}my Alvarez-Herault and Ken Mackay",

year = "2012",

doi = "10.1109/DATE.2012.6176526",

language = "English",

isbn = "978-1-4577-2145-8",

pages = "532--537",

booktitle = "2012 Design, Automation & Test in Europe Conference & Exhibition (DATE)",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012, DATE 2012 ; Conference date: 12-03-2012 Through 16-03-2012",

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}

Azevedo, J, Virazel, A, Bosio, A, Dilillo, L, Girard, P, Todri-Sanial, A, Prenat, G, Alvarez-Herault, J & Mackay, K 2012, Impact of resistive-open defects on the heat current of TAS-MRAM architectures. in 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE). Institute of Electrical and Electronics Engineers, pp. 532-537, 15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012, Dresden, Germany, 12/03/12. https://doi.org/10.1109/DATE.2012.6176526

Impact of resistive-open defects on the heat current of TAS-MRAM architectures. / Azevedo, Joao; Virazel, Arnaud; Bosio, Alberto et al.
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE). Institute of Electrical and Electronics Engineers, 2012. p. 532-537.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Impact of resistive-open defects on the heat current of TAS-MRAM architectures

AU - Azevedo, Joao

AU - Virazel, Arnaud

AU - Bosio, Alberto

AU - Dilillo, Luigi

AU - Girard, Patrick

AU - Todri-Sanial, Aida

AU - Prenat, G.

AU - Alvarez-Herault, Jérémy

AU - Mackay, Ken

N1 - Conference code: 15

PY - 2012

Y1 - 2012

N2 - Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4×4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture.

AB - Magnetic Random Access Memory (MRAM) is an emerging technology with the potential to become the universal on-chip memory. Among the existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages compared to the others technologies: selectivity, single magnetic field and integration density. As any other types of memory, TAS-MRAMs are prone to defects, so TAS-MRAM testing needs definitely to be investigated since only few papers can be found in the literature. In this paper we analyze the impact resistive-open defects on the heat current of a TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 4×4 TAS-MRAM architecture enabling any read/write operations. Results show that W0 and/or W1 operations may be affected by the resistive-open defects. This study provides insights into the various types of TAS-MRAM defects and their behavior. As future work, we plan to utilize these analyses results to guide the test phase by providing effective test algorithm targeting fault related to actual defects that may affect TAS-MRAM architecture.

U2 - 10.1109/DATE.2012.6176526

DO - 10.1109/DATE.2012.6176526

M3 - Conference contribution

SN - 978-1-4577-2145-8

SP - 532

EP - 537

BT - 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE)

PB - Institute of Electrical and Electronics Engineers

T2 - 15th Design, Automation and Test in Europe Conference and Exhibition, DATE 2012

Y2 - 12 March 2012 through 16 March 2012

ER -

Impact of resistive-open defects on the heat current of TAS-MRAM architectures

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