Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

Joao Azevedo; Arnaud Virazel; Alberto Bosio; Luigi Dilillo; Patrick Girard; Aida Todri; G. Prenat; Jérémy Alvarez-Herault; Ken Mackay

doi:10.1109/ATS.2012.37

Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

Joao Azevedo
, Arnaud Virazel
, Alberto Bosio
, Luigi Dilillo
, Patrick Girard
, Aida Todri
, G. Prenat
, Jérémy Alvarez-Herault
, Ken Mackay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that both read and write operations may be affected by these defects. Especially, we demonstrate that resistive-bridge defects may have a local (single cell) or global (multiple cells) impact on the TAS-MRAM functioning. As these analysis results will be further used to develop effective test algorithms targeting faults related to actual resistive bridge-defects that may affect TAS-MRAM architecture.

Original language	English
Title of host publication	2012 IEEE 21st Asian Test Symposium
Publisher	Institute of Electrical and Electronics Engineers
Pages	125-130
Number of pages	6
ISBN (Electronic)	978-0-7695-4876-0
ISBN (Print)	978-1-4673-4555-2
DOIs	https://doi.org/10.1109/ATS.2012.37
Publication status	Published - 31 Dec 2012
Externally published	Yes
Event	21st IEEE Asian Test Symposium (ATS 2012) - Nigata, Japan Duration: 19 Nov 2012 → 22 Nov 2012

Conference

Conference	21st IEEE Asian Test Symposium (ATS 2012)
Country/Territory	Japan
City	Nigata
Period	19/11/12 → 22/11/12

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10.1109/ATS.2012.37

Cite this

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title = "Impact of Resistive-Bridge Defects in TAS-MRAM Architectures",

abstract = "Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that both read and write operations may be affected by these defects. Especially, we demonstrate that resistive-bridge defects may have a local (single cell) or global (multiple cells) impact on the TAS-MRAM functioning. As these analysis results will be further used to develop effective test algorithms targeting faults related to actual resistive bridge-defects that may affect TAS-MRAM architecture.",

author = "Joao Azevedo and Arnaud Virazel and Alberto Bosio and Luigi Dilillo and Patrick Girard and Aida Todri and G. Prenat and J{\'e}r{\'e}my Alvarez-Herault and Ken Mackay",

year = "2012",

month = dec,

day = "31",

doi = "10.1109/ATS.2012.37",

language = "English",

isbn = "978-1-4673-4555-2",

pages = "125--130",

booktitle = "2012 IEEE 21st Asian Test Symposium",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "21st IEEE Asian Test Symposium (ATS 2012) ; Conference date: 19-11-2012 Through 22-11-2012",

}

Azevedo, J, Virazel, A, Bosio, A, Dilillo, L, Girard, P, Todri, A, Prenat, G, Alvarez-Herault, J & Mackay, K 2012, Impact of Resistive-Bridge Defects in TAS-MRAM Architectures. in 2012 IEEE 21st Asian Test Symposium. Institute of Electrical and Electronics Engineers, pp. 125-130, 21st IEEE Asian Test Symposium (ATS 2012), Nigata, Japan, 19/11/12. https://doi.org/10.1109/ATS.2012.37

TY - GEN

T1 - Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

AU - Azevedo, Joao

AU - Virazel, Arnaud

AU - Bosio, Alberto

AU - Dilillo, Luigi

AU - Girard, Patrick

AU - Todri, Aida

AU - Prenat, G.

AU - Alvarez-Herault, Jérémy

AU - Mackay, Ken

PY - 2012/12/31

Y1 - 2012/12/31

N2 - Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that both read and write operations may be affected by these defects. Especially, we demonstrate that resistive-bridge defects may have a local (single cell) or global (multiple cells) impact on the TAS-MRAM functioning. As these analysis results will be further used to develop effective test algorithms targeting faults related to actual resistive bridge-defects that may affect TAS-MRAM architecture.

AB - Magnetic Random Access Memory (MRAM) is an emerging memory technology. Among existing MRAM technologies, the Thermally Assisted Switching (TAS) MRAM technology offers several advantages such as selectivity, single magnetic field and high integration density. In this paper, we analyze resistive-bridge defects that may affect the TAS-MRAM architecture. Electrical simulations were performed on a hypothetical 16-words TAS-MRAM architecture enabling any sequences of read/write operations. Results show that both read and write operations may be affected by these defects. Especially, we demonstrate that resistive-bridge defects may have a local (single cell) or global (multiple cells) impact on the TAS-MRAM functioning. As these analysis results will be further used to develop effective test algorithms targeting faults related to actual resistive bridge-defects that may affect TAS-MRAM architecture.

U2 - 10.1109/ATS.2012.37

DO - 10.1109/ATS.2012.37

M3 - Conference contribution

SN - 978-1-4673-4555-2

SP - 125

EP - 130

BT - 2012 IEEE 21st Asian Test Symposium

PB - Institute of Electrical and Electronics Engineers

T2 - 21st IEEE Asian Test Symposium (ATS 2012)

Y2 - 19 November 2012 through 22 November 2012

ER -

Impact of Resistive-Bridge Defects in TAS-MRAM Architectures

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