Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.
|Number of pages||7|
|Journal||International Journal of RF and Microwave Computer-Aided Engineering|
|Publication status||Published - 2001|