Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

E.P. Vandamme; D. Schreurs; C.H.J. Dinther, van

doi:10.1002/mmce.1012

Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

E.P. Vandamme, D. Schreurs, C.H.J. Dinther, van

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

Original language	English
Pages (from-to)	114-120
Number of pages	7
Journal	International Journal of RF and Microwave Computer-Aided Engineering
Volume	11
Issue number	3
DOIs	https://doi.org/10.1002/mmce.1012
Publication status	Published - 2001
Externally published	Yes

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10.1002/mmce.1012

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title = "Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it",

abstract = "Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.",

author = "E.P. Vandamme and D. Schreurs and {Dinther, van}, C.H.J.",

year = "2001",

doi = "10.1002/mmce.1012",

language = "English",

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pages = "114--120",

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issn = "1096-4290",

publisher = "Wiley",

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AU - Vandamme, E.P.

AU - Schreurs, D.

AU - Dinther, van, C.H.J.

PY - 2001

Y1 - 2001

N2 - Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

AB - Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

U2 - 10.1002/mmce.1012

DO - 10.1002/mmce.1012

M3 - Article

SN - 1096-4290

VL - 11

SP - 114

EP - 120

JO - International Journal of RF and Microwave Computer-Aided Engineering

JF - International Journal of RF and Microwave Computer-Aided Engineering

IS - 3

ER -

Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

Abstract

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