Abstract
In this work we show that the negative bias illumination stress (NBIS) of amorphous Indium Gallium Zinc Oxide (a-IGZO) transistors with an etch stop layer (ESL) deposited by physical vapor deposition (PVD) is substantially better than the NBIS of devices where the ESL layer is deposited by plasma enhanced chemical vapor deposition (PECVD). Both devices show similar transistor characteristics and bias stress in the dark but under NBIS conditions at 425 nm, PVD ESL based transistors show much less threshold voltage shift. The reduction in deep defects due to passivation by PVD layer is responsible for improved performance under NBIS.
| Original language | English |
|---|---|
| Title of host publication | 2014 44th European Solid State Device Research Conference (ESSDERC) 22-26 Sept. 2014, Palazzo del Casinò, Venezia Lido, Italy |
| Editors | R. Bez |
| Place of Publication | Piscataway |
| Publisher | IEEE Computer Society |
| Pages | 302-304 |
| Number of pages | 3 |
| ISBN (Electronic) | 978-1-4799-4376-0 |
| ISBN (Print) | 978-1-4799-4378-4 |
| DOIs | |
| Publication status | Published - 5 Nov 2014 |
| Externally published | Yes |
| Event | 44th European Solid-State Device Research Conference (ESSDERC 2014) - Palazzo del Casinò, Venezia, Italy Duration: 22 Sep 2014 → 26 Sep 2014 Conference number: 44 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6926646 |
Conference
| Conference | 44th European Solid-State Device Research Conference (ESSDERC 2014) |
|---|---|
| Abbreviated title | ESSDERC 2014 |
| Country/Territory | Italy |
| City | Venezia |
| Period | 22/09/14 → 26/09/14 |
| Internet address |
Keywords
- a-IGZO
- ESL
- NBIS
- PECVD
- PVD