III-V/Silicon first order distributed feedback lasers integrated on SOI waveguide circuits

S. Keyvaninia, S. Verstuyft, L. Landschoot, van, D. Thourhout, Van, G.C. Roelkens, G.-H. Duan, F. Lelarge, J.M. Fedeli, S. Messaoudene, T. Vries, de, E.J. Geluk, E. Smalbrugge, M.K. Smit

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Downloads (Pure)

Abstract

Heterogeneously integrated III-V-on-silicon first order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 5 mW output power coupled to a silicon waveguide, 40 dB side mode suppression ratio and continuous wave operation up to 60°C is obtained.
Original languageEnglish
Title of host publicationProceedings of the 39th European Conference and Exhibition on Optical Communication (ECOC 2013), 22-26 September 2013, London, United Kingdom
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesMo.4.B.3-1/4
DOIs
Publication statusPublished - 2013
Event39th European Conference and Exhibition on Optical Communication (ECOC 2013) - London, United Kingdom
Duration: 22 Sept 201326 Sept 2013
Conference number: 39

Conference

Conference39th European Conference and Exhibition on Optical Communication (ECOC 2013)
Abbreviated titleECOC 2013
Country/TerritoryUnited Kingdom
CityLondon
Period22/09/1326/09/13

Fingerprint

Dive into the research topics of 'III-V/Silicon first order distributed feedback lasers integrated on SOI waveguide circuits'. Together they form a unique fingerprint.

Cite this