III-V semiconductor nanowires grown on silicon for vertical devices

A. Helman, M.T. Borgström, O. Wunnicke, W. Einden, Van Den, M.A. Verheijen, A.L. Roest, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires. U7 - Export Date: 2 August 2010 U7 - Source: Scopus
Original languageEnglish
Title of host publication2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Publication statusPublished - 2006


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