III-V semiconductor nanowires grown on silicon for vertical devices

A. Helman; M.T. Borgström; O. Wunnicke; W. Einden, Van Den; M.A. Verheijen; A.L. Roest; E.P.A.M. Bakkers

III-V semiconductor nanowires grown on silicon for vertical devices

A. Helman, M.T. Borgström, O. Wunnicke, W. Einden, Van Den, M.A. Verheijen, A.L. Roest, E.P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires. U7 - Export Date: 2 August 2010 U7 - Source: Scopus

Original language	English
Title of host publication	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Pages	133-136
Volume	3
Publication status	Published - 2006

Cite this

@inproceedings{c510382b7f624040beca423a294a9a2b,

title = "III-V semiconductor nanowires grown on silicon for vertical devices",

abstract = "In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires. U7 - Export Date: 2 August 2010 U7 - Source: Scopus",

author = "A. Helman and M.T. Borgstr{\"o}m and O. Wunnicke and {Einden, Van Den}, W. and M.A. Verheijen and A.L. Roest and E.P.A.M. Bakkers",

year = "2006",

language = "English",

volume = "3",

pages = "133--136",

booktitle = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings",

}

TY - GEN

T1 - III-V semiconductor nanowires grown on silicon for vertical devices

AU - Helman, A.

AU - Borgström, M.T.

AU - Wunnicke, O.

AU - Einden, Van Den, W.

AU - Verheijen, M.A.

AU - Roest, A.L.

AU - Bakkers, E.P.A.M.

PY - 2006

Y1 - 2006

N2 - In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires. U7 - Export Date: 2 August 2010 U7 - Source: Scopus

AB - In this work we explore the potential of III-V semiconductor nanowires grown on silicon for the fabrication of electronic devices such as bipolar and field effect transistors. The main interest arises from the combination of (opto)electronic properties of III-V semiconductors with the existing silicon-based technology. A detailed structural characterization of III-V nanowires grown by laser ablation and metal-organic vapor-phase-epitaxy on silicon has been carried out by means of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) in order to asses the epitaxial growth and the quality of the heterointerface. GaP/GaAs heterostructures and core/shell structures have also been investigated. Electrical characterization is carried out in order to determine transport properties and deduce information about the band structure of the nanowires. U7 - Export Date: 2 August 2010 U7 - Source: Scopus

M3 - Conference contribution

VL - 3

SP - 133

EP - 136

BT - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

ER -

III-V semiconductor nanowires grown on silicon for vertical devices

Abstract

Fingerprint

Cite this