@inproceedings{bb1968de5f6a4f28af027563cd68c9a0,
title = "ICP etching of InP and its applications in photonic circuits",
abstract = "Ridge waveguides with smooth and vertical sidewalls are essential in photonic circuits. We have investigated waveguide realization with reactive ion etching of InP and InP-based structures using a SiNx. in a Ch/H2/CH4 chemistry in an rcp plasma. Depending on ICP power and RF power, etching rates can be obtained from 200 nmlmin up to > 2f.Lmlrnin. A maximum etching selectivity of InP vs SiNx of 12 was obtained at 2000 W of rep power. Deep etched waveguides, fabricated in an InP/InGaAsP double heterostructure, show typical losses of 2 dB/cm. This low value shows the potential of rep technique in the fabrication of photonic circuits.",
author = "F. Karouta and Y.C. Zhu and E.J. Geluk and \{Tol, van der\}, J.J.G.M. and J.J.M. Binsma and M.K. Smit",
year = "2003",
doi = "10.1117/12.530339",
language = "English",
isbn = "0-8194-5170-3",
series = "Proceedings of SPIE",
publisher = "SPIE",
pages = "22--28",
editor = "C. Jagadish and K.D. Choquette and B.J. Eggleton",
booktitle = "SPIE International Symposium on Photonics: Design, Technology, and Packaging, 10-12 December 2003",
address = "United States",
note = "conference; Microelectronics, MEMS and Nanotechnology Symposium, Perth, Australia; 2003-12-10; 2003-12-12 ; Conference date: 10-12-2003 Through 12-12-2003",
}