Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate

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Abstract

Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach excellent surface passivation of c-Si wafers, such as a hydrogen-rich and atomically abrupt a-Si:H/c-Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a-Si:H growth rates, we show that a high a-Si:H deposition rate (~3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post-deposition thermal treatments of solar cells.
Original languageEnglish
Pages (from-to)206-208
JournalPhysica Status Solidi : Rapid Research Letters
Volume4
Issue number8-9
DOIs
Publication statusPublished - 2010

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