Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

G. Dingemans, W. Beyer, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400¿°C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800¿°C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.
Original languageEnglish
Article number152106
Pages (from-to)152106-1/3
JournalApplied Physics Letters
Volume97
Issue number15
DOIs
Publication statusPublished - 2010

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passivity
hydrogen
atomic layer epitaxy
thermal stability
annealing
defects
temperature

Cite this

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title = "Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks",
abstract = "The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400¿°C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800¿°C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.",
author = "G. Dingemans and W. Beyer and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
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Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks. / Dingemans, G.; Beyer, W.; Sanden, van de, M.C.M.; Kessels, W.M.M.

In: Applied Physics Letters, Vol. 97, No. 15, 152106, 2010, p. 152106-1/3.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

AU - Dingemans, G.

AU - Beyer, W.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400¿°C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800¿°C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

AB - The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400¿°C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800¿°C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects.

U2 - 10.1063/1.3497014

DO - 10.1063/1.3497014

M3 - Article

VL - 97

SP - 152106-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152106

ER -