Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

M.C.M. Sanden, van de; R.J. Severens; W.M.M. Kessels; F. van de Pas; L.J. IJzendoorn, van; D.C. Schram

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

M.C.M. Sanden, van de, R.J. Severens, W.M.M. Kessels, F. van de Pas, L.J. IJzendoorn, van, D.C. Schram

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

Original language	English
Title of host publication	Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.
Editors	S. Wagner
Pages	621-626
Number of pages	6
Publication status	Published - 1 Dec 1997
Event	1997 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 31 Mar 1997 → 4 Apr 1997 https://www.mrs.org/spring1997 http://www.mrs.org/s97-program-l/

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	467
ISSN (Print)	0272-9172

Conference

Conference	1997 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	31/03/97 → 4/04/97
Other
Internet address	https://www.mrs.org/spring1997 http://www.mrs.org/s97-program-l/

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Sanden, van de, M. C. M., Severens, R. J., Kessels, W. M. M., van de Pas, F., IJzendoorn, van, L. J., & Schram, D. C. (1997). Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3. In S. Wagner (Ed.), Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A. (pp. 621-626). (Materials Research Society Symposium Proceedings; Vol. 467).

Sanden, van de, M.C.M. ; Severens, R.J. ; Kessels, W.M.M. et al. / Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3. Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.. editor / S. Wagner. 1997. pp. 621-626 (Materials Research Society Symposium Proceedings).

@inproceedings{63541e4d247141338ca7bf7a2dcc9683,

title = "Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3",

abstract = "The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.",

author = "\{Sanden, van de\}, M.C.M. and R.J. Severens and W.M.M. Kessels and \{van de Pas\}, F. and \{IJzendoorn, van\}, L.J. and D.C. Schram",

year = "1997",

month = dec,

day = "1",

language = "English",

isbn = "1-558-99371-1",

series = "Materials Research Society Symposium Proceedings",

pages = "621--626",

editor = "S. Wagner",

booktitle = "Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.",

note = "1997 MRS Spring Meeting \& Exhibit ; Conference date: 31-03-1997 Through 04-04-1997",

url = "https://www.mrs.org/spring1997, http://www.mrs.org/s97-program-l/",

}

Sanden, van de, MCM, Severens, RJ, Kessels, WMM, van de Pas, F, IJzendoorn, van, LJ & Schram, DC 1997, Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3. in S Wagner (ed.), Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.. Materials Research Society Symposium Proceedings, vol. 467, pp. 621-626, 1997 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 31/03/97.

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3. / Sanden, van de, M.C.M.; Severens, R.J.; Kessels, W.M.M. et al.
Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.. ed. / S. Wagner. 1997. p. 621-626 (Materials Research Society Symposium Proceedings; Vol. 467).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

AU - Sanden, van de, M.C.M.

AU - Severens, R.J.

AU - Kessels, W.M.M.

AU - van de Pas, F.

AU - IJzendoorn, van, L.J.

AU - Schram, D.C.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

AB - The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si:H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

UR - http://www.scopus.com/inward/record.url?scp=0031378799&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1-558-99371-1

T3 - Materials Research Society Symposium Proceedings

SP - 621

EP - 626

BT - Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.

A2 - Wagner, S.

T2 - 1997 MRS Spring Meeting & Exhibit

Y2 - 31 March 1997 through 4 April 1997

ER -

Sanden, van de MCM, Severens RJ, Kessels WMM, van de Pas F, IJzendoorn, van LJ , Schram DC. Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3. In Wagner S, editor, Amorphous and microcrystalline silicon technology, 1997 : symposium held March 31 - April 4, 1997, San Francisco, California, U.S.A.. 1997. p. 621-626. (Materials Research Society Symposium Proceedings).

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

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