Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

W.M.M. Kessels; M.C.M. Sanden, van de; R.J. Severens; L.J. IJzendoorn, van; D.C. Schram

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

W.M.M. Kessels, M.C.M. Sanden, van de, R.J. Severens, L.J. IJzendoorn, van, D.C. Schram

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

22 Citations (Scopus)

Abstract

The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

Original language	English
Title of host publication	Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.
Editors	R. Schropp
Pages	529-534
Number of pages	6
Publication status	Published - 1998
Event	1998 MRS Spring Meeting & Exhibit - San Francisco, United States Duration: 13 Apr 1998 → 17 Apr 1998 https://www.mrs.org/spring1998

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	507
ISSN (Print)	0272-9172

Conference

Conference	1998 MRS Spring Meeting & Exhibit
Country/Territory	United States
City	San Francisco
Period	13/04/98 → 17/04/98
Other	Symposium held at the 1998 MRS Spring Meeting
Internet address	https://www.mrs.org/spring1998

Cite this

Kessels, W. M. M., Sanden, van de, M. C. M., Severens, R. J., IJzendoorn, van, L. J., & Schram, D. C. (1998). Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. In R. Schropp (Ed.), Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A. (pp. 529-534). (Materials Research Society Symposium Proceedings; Vol. 507).

Kessels, W.M.M. ; Sanden, van de, M.C.M. ; Severens, R.J. et al. / Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. editor / R. Schropp. 1998. pp. 529-534 (Materials Research Society Symposium Proceedings).

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abstract = "The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.",

author = "W.M.M. Kessels and {Sanden, van de}, M.C.M. and R.J. Severens and {IJzendoorn, van}, L.J. and D.C. Schram",

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editor = "R. Schropp",

booktitle = "Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.",

note = "1998 MRS Spring Meeting & Exhibit ; Conference date: 13-04-1998 Through 17-04-1998",

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Kessels, WMM , Sanden, van de, MCM, Severens, RJ, IJzendoorn, van, LJ & Schram, DC 1998, Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. in R Schropp (ed.), Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. Materials Research Society Symposium Proceedings, vol. 507, pp. 529-534, 1998 MRS Spring Meeting & Exhibit, San Francisco, California, United States, 13/04/98.

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. / Kessels, W.M.M.; Sanden, van de, M.C.M.; Severens, R.J. et al.
Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. ed. / R. Schropp. 1998. p. 529-534 (Materials Research Society Symposium Proceedings; Vol. 507).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Kessels WMM , Sanden, van de MCM, Severens RJ, IJzendoorn, van LJ , Schram DC. Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. In Schropp R, editor, Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. 1998. p. 529-534. (Materials Research Society Symposium Proceedings).

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

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