Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

P. Boher; M. Renaud; L.J. IJzendoorn, van; Y. Hily

doi:10.1063/1.100915

Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

P. Boher, M. Renaud, L.J. IJzendoorn, van, Y. Hily

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Abstract

Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.

Original language	English
Pages (from-to)	511-513
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	6
DOIs	https://doi.org/10.1063/1.100915
Publication status	Published - 1989

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@article{cfab47e54fac4385b7ce2e0d2251bbea,

title = "Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition",

abstract = "Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.",

author = "P. Boher and M. Renaud and {IJzendoorn, van}, L.J. and Y. Hily",

year = "1989",

doi = "10.1063/1.100915",

language = "English",

volume = "54",

pages = "511--513",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

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TY - JOUR

T1 - Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

AU - Boher, P.

AU - Renaud, M.

AU - IJzendoorn, van, L.J.

AU - Hily, Y.

PY - 1989

Y1 - 1989

N2 - Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.

AB - Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.

U2 - 10.1063/1.100915

DO - 10.1063/1.100915

M3 - Article

SN - 0003-6951

VL - 54

SP - 511

EP - 513

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

Abstract

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