Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition

P. Boher, M. Renaud, L.J. IJzendoorn, van, Y. Hily

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.
    Original languageEnglish
    Pages (from-to)511-513
    Number of pages3
    JournalApplied Physics Letters
    Volume54
    Issue number6
    DOIs
    Publication statusPublished - 1989

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