Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy

A.J. Urbanczyk; G.J. Hamhuis; R. Notzel

doi:10.1016/j.jcrysgro.2011.01.026

Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy

A.J. Urbanczyk, G.J. Hamhuis, R. Notzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.

Original language	English
Pages (from-to)	290-292
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.026
Publication status	Published - 2011

Access to Document

10.1016/j.jcrysgro.2011.01.026

Fingerprint Dive into the research topics of 'Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy'. Together they form a unique fingerprint.

Cite this

@article{9a9a33c872cf4c3f8ae371fe903a0260,

title = "Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy",

abstract = "We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.",

author = "A.J. Urbanczyk and G.J. Hamhuis and R. Notzel",

year = "2011",

doi = "10.1016/j.jcrysgro.2011.01.026",

language = "English",

volume = "323",

pages = "290--292",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy

AU - Urbanczyk, A.J.

AU - Hamhuis, G.J.

AU - Notzel, R.

PY - 2011

Y1 - 2011

N2 - We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.

AB - We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.

U2 - 10.1016/j.jcrysgro.2011.01.026

DO - 10.1016/j.jcrysgro.2011.01.026

M3 - Article

VL - 323

SP - 290

EP - 292

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -