Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy

A.J. Urbanczyk, G.J. Hamhuis, R. Notzel

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.
Original languageEnglish
Pages (from-to)290-292
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
Publication statusPublished - 2011

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