Abstract
We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.
| Original language | English |
|---|---|
| Pages (from-to) | 290-292 |
| Journal | Journal of Crystal Growth |
| Volume | 323 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2011 |
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Urbanczyk, A. J., Hamhuis, G. J., & Notzel, R. (2011). Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy. Journal of Crystal Growth, 323(1), 290-292. https://doi.org/10.1016/j.jcrysgro.2011.01.026