TY - JOUR
T1 - Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molcular beam epitaxy
AU - Urbanczyk, A.J.
AU - Hamhuis, G.J.
AU - Notzel, R.
PY - 2011
Y1 - 2011
N2 - We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.
AB - We report the formation of In nanocrystals and their alignment near dilute InAs quantum dots (QDs) on GaAs (0 0 1) by molecular beam epitaxy. The In nanocrystals exhibit surface plasmon resonances in the near-infrared range, which can be matched with the emission wavelength of In(Ga)As QDs. The alignment of the In nanocrystals near the InAs QDs is due to the strain-driven migration yielding single isolated QD-metal nanocrystal pairs and isolated QD-metal nanocrystal dimer structures, representing the basic hybrid QD-metal nanocrystal plasmonic nanostructures.
U2 - 10.1016/j.jcrysgro.2011.01.026
DO - 10.1016/j.jcrysgro.2011.01.026
M3 - Article
VL - 323
SP - 290
EP - 292
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -