Huang-Rhys parameter of InAs/GaAs self-assembled quantum dots obtained from micro-PL experiments

A.W.E. Minnaert, A.Y. Silov, J.H. Wolter

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Abstract

We show that niicro-photolurninescence experiments allow unambiguous identification of the one-phonon sjdebands for the individual quantum dots. This makes the appropriate measurement of Huang-Rhys parameter for a single quantum dot possible. The measured Huang-Rhys parameter is as large as ±0.52 for the small sized lnAs/GaAs self-assembled quantum dots with the photoluminescence peak position at 1.313 eV. This value is close to the value calculated in the limiting case of our theoretical framework.
Original languageEnglish
Title of host publicationProceedings of the 25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan, Part II
EditorsN. Miura, T. Ando
Place of PublicationBerlin
PublisherSpringer
Pages1235-1236
ISBN (Print)3-540-41778-8
Publication statusPublished - 2001
Event25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan
Duration: 17 Sept 200022 Sept 2000

Publication series

NameSpringer Proceedings in Physics
Volume87
ISSN (Print)0930-8989

Conference

Conference25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
Country/TerritoryJapan
CityOsaka
Period17/09/0022/09/00
Other25th Int. Conf. on the Physics of Semiconductors

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