Hot-wire deposition of a-Si:H thin films on wafer substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

P.J. Oever, van den, J.J.H. Gielis, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Contribution to journalArticleAcademicpeer-review

7 Citations (Scopus)

Abstract

Film growth of hydrogenated amorphous silicon (a-Si:H) by hot-wire chemical vapor deposition was studied simultaneously and in real-time by spectroscopic ellipsometry and attenuated total reflection infrared spectroscopy. The a-Si:H films were deposited on native oxide-covered GaAs(100) and Si(100) substrates at temperatures ranging from 70 to 350 °C. A temperature dependent initial growth phase is revealed by the evolution of the surface roughness and the surface and bulk SiHx absorption peaks. It is discussed that the films show a distinct nucleation behavior by the formation of islands on the surface that subsequently coalesce followed by bulk a-Si:H growth. Insight into a temperature-activated smoothening mechanism and the creation of a hydrogen-rich interface layer is presented.
Original languageEnglish
Pages (from-to)511-516
JournalThin Solid Films
Volume516
Issue number5
DOIs
Publication statusPublished - 2008

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