Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks; E.A.E. Zwaal; J.G.A. Dubois; F.A.P. Blom; J.H. Wolter

Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks, E.A.E. Zwaal, J.G.A. Dubois, F.A.P. Blom, J.H. Wolter

Photonics and Semiconductor Nanophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

Original language	English
Title of host publication	Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2
Editors	E.M. Anastassakis, J.D. Joannopoulos
Place of Publication	London
Publisher	World Scientific
Pages	1605-1608
ISBN (Print)	981-02-0290-3
Publication status	Published - 1990

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Hendriks, P., Zwaal, E. A. E., Dubois, J. G. A., Blom, F. A. P., & Wolter, J. H. (1990). Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures. In E. M. Anastassakis, & J. D. Joannopoulos (Eds.), Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2 (pp. 1605-1608). World Scientific.

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abstract = "A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.",

author = "P. Hendriks and E.A.E. Zwaal and J.G.A. Dubois and F.A.P. Blom and J.H. Wolter",

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editor = "E.M. Anastassakis and J.D. Joannopoulos",

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Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures. / Hendriks, P.; Zwaal, E.A.E.; Dubois, J.G.A. et al.
Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2. ed. / E.M. Anastassakis; J.D. Joannopoulos. London: World Scientific, 1990. p. 1605-1608.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

AU - Hendriks, P.

AU - Zwaal, E.A.E.

AU - Dubois, J.G.A.

AU - Blom, F.A.P.

AU - Wolter, J.H.

PY - 1990

Y1 - 1990

N2 - A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

AB - A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

M3 - Conference contribution

SN - 981-02-0290-3

SP - 1605

EP - 1608

BT - Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2

A2 - Anastassakis, E.M.

A2 - Joannopoulos, J.D.

PB - World Scientific

CY - London

ER -

Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

Abstract

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