Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks, E.A.E. Zwaal, J.G.A. Dubois, F.A.P. Blom, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.
Original languageEnglish
Title of host publicationProceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2
EditorsE.M. Anastassakis, J.D. Joannopoulos
Place of PublicationLondon
PublisherWorld Scientific
Pages1605-1608
ISBN (Print)981-02-0290-3
Publication statusPublished - 1990

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