A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.
|Title of host publication||Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2|
|Editors||E.M. Anastassakis, J.D. Joannopoulos|
|Place of Publication||London|
|Publication status||Published - 1990|