Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

R.C.P. Hoskens; T.G. Roer, van de; V.I. Tolstikhin; A. Förster

doi:10.1109/LEOS.2000.893905

Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

R.C.P. Hoskens, T.G. Roer, van de, V.I. Tolstikhin, A. Förster

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm2, from the current AlGaAs-GaAs HEL with InGaAs bulk active layer

Original language	English
Title of host publication	Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers
Pages	444-445
ISBN (Print)	0-7803-5947-X
DOIs	https://doi.org/10.1109/LEOS.2000.893905
Publication status	Published - 2000
Event	conference; 13th Annual Meeting, Rio Grande, Puerto Rico; 2000-11-13; 2000-11-16 - Duration: 13 Nov 2000 → 16 Nov 2000

Conference

Conference	conference; 13th Annual Meeting, Rio Grande, Puerto Rico; 2000-11-13; 2000-11-16
Period	13/11/00 → 16/11/00
Other	13th Annual Meeting, Rio Grande, Puerto Rico

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10.1109/LEOS.2000.893905

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Hoskens, R. C. P., Roer, van de, T. G., Tolstikhin, V. I., & Förster, A. (2000). Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. In Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico (pp. 444-445). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/LEOS.2000.893905

Hoskens, R.C.P. ; Roer, van de, T.G. ; Tolstikhin, V.I. et al. / Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico. Piscataway, NJ : Institute of Electrical and Electronics Engineers, 2000. pp. 444-445

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abstract = "The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm2, from the current AlGaAs-GaAs HEL with InGaAs bulk active layer",

author = "R.C.P. Hoskens and {Roer, van de}, T.G. and V.I. Tolstikhin and A. F{\"o}rster",

year = "2000",

doi = "10.1109/LEOS.2000.893905",

language = "English",

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pages = "444--445",

booktitle = "Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico",

publisher = "Institute of Electrical and Electronics Engineers",

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note = "conference; 13th Annual Meeting, Rio Grande, Puerto Rico; 2000-11-13; 2000-11-16 ; Conference date: 13-11-2000 Through 16-11-2000",

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Hoskens, RCP, Roer, van de, TG, Tolstikhin, VI & Förster, A 2000, Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. in Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico. Institute of Electrical and Electronics Engineers, Piscataway, NJ, pp. 444-445, conference; 13th Annual Meeting, Rio Grande, Puerto Rico; 2000-11-13; 2000-11-16, 13/11/00. https://doi.org/10.1109/LEOS.2000.893905

Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. / Hoskens, R.C.P.; Roer, van de, T.G.; Tolstikhin, V.I. et al.
Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico. Piscataway, NJ: Institute of Electrical and Electronics Engineers, 2000. p. 444-445.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Tolstikhin, V.I.

AU - Förster, A.

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N2 - The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm2, from the current AlGaAs-GaAs HEL with InGaAs bulk active layer

AB - The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm2, from the current AlGaAs-GaAs HEL with InGaAs bulk active layer

UR - http://tte.ele.tue.nl/oed/publications/OED pubs 2000/Hoskens IEEE Leosbenelux '2000, Hot electron.pdf

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DO - 10.1109/LEOS.2000.893905

M3 - Conference contribution

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BT - Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico

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Hoskens RCP, Roer, van de TG, Tolstikhin VI, Förster A. Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. In Proceedings of the 13th IEEE Annual Meeting on Lasers and Electro-Optics Society (LEOS 2000) 13-16 november 2000, Rio Grande, Puerto Rico. Piscataway, NJ: Institute of Electrical and Electronics Engineers. 2000. p. 444-445 doi: 10.1109/LEOS.2000.893905

Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

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