Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

R.C.P. Hoskens; T.G. Roer, van de; E. Smalbrugge; V.I. Tolstikhin; A. Förster

Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

R.C.P. Hoskens, T.G. Roer, van de, E. Smalbrugge, V.I. Tolstikhin, A. Förster

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands
Place of Publication	Utrecht
Publisher	STW Technology Foundation
Pages	65-68
ISBN (Print)	90-73461-24-3
Publication status	Published - 2000
Event	3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29-December 1, 2000, Veldhoven, The Netherlands - Veldhoven, Netherlands Duration: 29 Nov 2000 → 30 Nov 2000

Workshop

Workshop	3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29-December 1, 2000, Veldhoven, The Netherlands
Abbreviated title	SAFE 2000
Country/Territory	Netherlands
City	Veldhoven
Period	29/11/00 → 30/11/00

Cite this

Hoskens, R. C. P., Roer, van de, T. G., Smalbrugge, E., Tolstikhin, V. I., & Förster, A. (2000). Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. In Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands (pp. 65-68). STW Technology Foundation.

Hoskens, R.C.P. ; Roer, van de, T.G. ; Smalbrugge, E. et al. / Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands. Utrecht : STW Technology Foundation, 2000. pp. 65-68

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title = "Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation",

author = "R.C.P. Hoskens and {Roer, van de}, T.G. and E. Smalbrugge and V.I. Tolstikhin and A. F{\"o}rster",

year = "2000",

language = "English",

isbn = "90-73461-24-3",

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booktitle = "Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands",

publisher = "STW Technology Foundation",

note = "3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29-December 1, 2000, Veldhoven, The Netherlands, SAFE 2000 ; Conference date: 29-11-2000 Through 30-11-2000",

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Hoskens, RCP, Roer, van de, TG, Smalbrugge, E, Tolstikhin, VI & Förster, A 2000, Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. in Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands. STW Technology Foundation, Utrecht, pp. 65-68, 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29-December 1, 2000, Veldhoven, The Netherlands, Veldhoven, Netherlands, 29/11/00.

Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. / Hoskens, R.C.P.; Roer, van de, T.G.; Smalbrugge, E. et al.

Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands. Utrecht : STW Technology Foundation, 2000. p. 65-68.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

AU - Hoskens, R.C.P.

AU - Roer, van de, T.G.

AU - Smalbrugge, E.

AU - Tolstikhin, V.I.

AU - Förster, A.

PY - 2000

Y1 - 2000

M3 - Conference contribution

SN - 90-73461-24-3

SP - 65

EP - 68

BT - Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands

PB - STW Technology Foundation

CY - Utrecht

T2 - 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29-December 1, 2000, Veldhoven, The Netherlands

Y2 - 29 November 2000 through 30 November 2000

ER -

Hoskens RCP, Roer, van de TG, Smalbrugge E, Tolstikhin VI, Förster A. Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation. In Proceedings of the 3rd Workshop on Semiconductor Advances for Future Electronics (SAFE 2000), November 29 - December 1, Veldhoven, The Netherlands. Utrecht: STW Technology Foundation. 2000. p. 65-68