Hole density and composition dependence of ferromagnetic ordering in lead tin manganese telluride

H.J.M. Swagten; W.J.M. Jonge, de; R.R. Galazka; P. Warmenbol; J.T. Devreese

doi:10.1103/PhysRevB.37.9907

Hole density and composition dependence of ferromagnetic ordering in lead tin manganese telluride

H.J.M. Swagten, W.J.M. Jonge, de, R.R. Galazka, P. Warmenbol, J.T. Devreese

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Abstract

The influence of the concentration of charge carriers on the ferromagnetic phase transition of the semimagnetic semiconductor Pb1-x-ySnyMnxTe for various compositions is reported. A critical density of carriers above which a ferromagnetic transition can take place, is observed. A simple modified Ruderman-Kittel-Kasuya-Yosida mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute and a finite mean free path is implemented. An excellent quantitative agreement with the data is obtained.

Original language	English
Pages (from-to)	9907-9910
Number of pages	4
Journal	Physical Review B: Condensed Matter
Volume	37
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.37.9907
Publication status	Published - 1988

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abstract = "The influence of the concentration of charge carriers on the ferromagnetic phase transition of the semimagnetic semiconductor Pb1-x-ySnyMnxTe for various compositions is reported. A critical density of carriers above which a ferromagnetic transition can take place, is observed. A simple modified Ruderman-Kittel-Kasuya-Yosida mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute and a finite mean free path is implemented. An excellent quantitative agreement with the data is obtained.",

author = "H.J.M. Swagten and {Jonge, de}, W.J.M. and R.R. Galazka and P. Warmenbol and J.T. Devreese",

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AU - Swagten, H.J.M.

AU - Jonge, de, W.J.M.

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AU - Warmenbol, P.

AU - Devreese, J.T.

PY - 1988

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N2 - The influence of the concentration of charge carriers on the ferromagnetic phase transition of the semimagnetic semiconductor Pb1-x-ySnyMnxTe for various compositions is reported. A critical density of carriers above which a ferromagnetic transition can take place, is observed. A simple modified Ruderman-Kittel-Kasuya-Yosida mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute and a finite mean free path is implemented. An excellent quantitative agreement with the data is obtained.

AB - The influence of the concentration of charge carriers on the ferromagnetic phase transition of the semimagnetic semiconductor Pb1-x-ySnyMnxTe for various compositions is reported. A critical density of carriers above which a ferromagnetic transition can take place, is observed. A simple modified Ruderman-Kittel-Kasuya-Yosida mechanism for semiconductors is proposed in which carriers from two valence bands located in different regions of the Brillouin zone contribute and a finite mean free path is implemented. An excellent quantitative agreement with the data is obtained.

U2 - 10.1103/PhysRevB.37.9907

DO - 10.1103/PhysRevB.37.9907

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JO - Physical Review B: Condensed Matter

JF - Physical Review B: Condensed Matter

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