High‐resolution x‐ray diffraction of self‐organized InGaAs/GaAs quantum dot structures

A. Krost, F. Heinrichsdorff, D. Bimberg, A.A. Darhuber, G. Bauer

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Abstract

The structural properties of highly strained buried InxGa1-xAs layers on GaAs substrates are investigated by high-resolution x-ray diffraction. Such layers of a few monolayers in thickness serve for the formation of self-organized quantum dots by the Stranski–Krastanow growth mode. Exceeding a critical layer thickness the growth mode changes from two-dimensional Frank–van der Merwe to the three-dimensional Stranski–Krastanow mode resulting in the formation of coherently strained InxGa1-xAs islands. X-ray spectra of such structures below the growth mode transition can be perfectly simulated using dynamical theory allowing for determination of layer thickness with submonolayer sensitivity and composition within 5%. Dot formation manifests itself in a decrease of the effective In content of the wetting layer.
Original languageEnglish
Pages (from-to)785-787
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number6
DOIs
Publication statusPublished - 1996

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