Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

M. Brauns, J. Ridderbos, A. Li, W.G. van der Wiel, E.P.A.M. Bakkers, F. Zwanenburg

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. Published by AIP Publishing.
Original languageEnglish
Article number143113
Pages (from-to)1-4
JournalApplied Physics Letters
Volume109
Issue number14
DOIs
Publication statusPublished - 3 Oct 2016

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