Highly stable carbon nanotube top-gate transistors with tunable threshold voltage

H. Wang, B. Cobb, A.J.J.M. van Breemen, G. Gelinck, Z. Bao

Research output: Contribution to journalArticleAcademicpeer-review

46 Citations (Scopus)

Abstract

Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time. 

Original languageEnglish
Pages (from-to)4588-4593
Number of pages6
JournalAdvanced Materials
Volume26
Issue number26
DOIs
Publication statusPublished - 9 Jul 2014
Externally publishedYes

Keywords

  • carbon nanotubes
  • stable
  • thin film transistors
  • threshold voltage

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