Highly regular self-organization of step bunches during growth of SiGe on Si(113)

A.A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer

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Abstract

We have studied the structural properties of highly periodic arrays of terrace steps in a Si/SiGe multilayer grown on a miscut Si(113) substrate by atomic force microscopy, x-ray reflection and high resolution x-ray diffraction. The data reveal a regular array of step bunches with vertical correlation within the multilayer and periodic surface steps extending over lengths of several tens of microns. The (113)-faceted terraces have a lateral period of about 360 nm which is locally modulated due to a long-range waviness of the surface.
Original languageEnglish
Pages (from-to)1535-1537
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number11
DOIs
Publication statusPublished - 1998

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    Darhuber, A. A., Zhu, J., Holy, V., Stangl, J., Mikulik, P., Brunner, K., Abstreiter, G., & Bauer, G. (1998). Highly regular self-organization of step bunches during growth of SiGe on Si(113). Applied Physics Letters, 73(11), 1535-1537. https://doi.org/10.1063/1.122197