Highly regular self-organization of step bunches during growth of SiGe on Si(113)

A.A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer

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    Abstract

    We have studied the structural properties of highly periodic arrays of terrace steps in a Si/SiGe multilayer grown on a miscut Si(113) substrate by atomic force microscopy, x-ray reflection and high resolution x-ray diffraction. The data reveal a regular array of step bunches with vertical correlation within the multilayer and periodic surface steps extending over lengths of several tens of microns. The (113)-faceted terraces have a lateral period of about 360 nm which is locally modulated due to a long-range waviness of the surface.
    Original languageEnglish
    Pages (from-to)1535-1537
    Number of pages3
    JournalApplied Physics Letters
    Volume73
    Issue number11
    DOIs
    Publication statusPublished - 1998

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